Doping and isolation of GaN, InGaN and InAlN using ion implantation

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Both n- and p-type doping have been achieved in GaN using Si{sup +} or Mg{sup +}/P{sup +} implantation, respectively, followed annealing at {ge} 1050{degrees}C. Using proximity rapid thermal annealing (10sec) the GaN surface retains both smooth morphology and its original stoichiometry. Variable temperature Hall measurements reveal approximate energy levels of 62meV for the implanted Si and 171meV for the Mg, which are similar to their values in epitaxially grown GaN. Implant isolation of both n- and p-type GaN, and n-type In{sub 0.75}Al{sub 0.25}N with multiple energy inert species (e.g. N{sup +} or F{sup +}) produces high resistivity ({ge}10{sup 8}{omega}/{open_square}) after ... continued below

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6 p.

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Pearton, S.J.; Vartuli, C.B. & Abernathy, C.R. August 1, 1995.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

Both n- and p-type doping have been achieved in GaN using Si{sup +} or Mg{sup +}/P{sup +} implantation, respectively, followed annealing at {ge} 1050{degrees}C. Using proximity rapid thermal annealing (10sec) the GaN surface retains both smooth morphology and its original stoichiometry. Variable temperature Hall measurements reveal approximate energy levels of 62meV for the implanted Si and 171meV for the Mg, which are similar to their values in epitaxially grown GaN. Implant isolation of both n- and p-type GaN, and n-type In{sub 0.75}Al{sub 0.25}N with multiple energy inert species (e.g. N{sup +} or F{sup +}) produces high resistivity ({ge}10{sup 8}{omega}/{open_square}) after subsequent annealing in the range 600-700{degrees}C. Smaller increases in sheet resistance are observed for In{sub x}Ga{sup 1-x}N (x=0.33-0.75) under the same conditions due to the smaller energy bandgaps and the shallower energy levels of the damage-related states controlling the resistivity.

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6 p.

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OSTI as DE95016409

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  • 6. international conference on silicon carbide and related materials, Kyoto (Japan), 18-21 Sep 1995

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  • Other: DE95016409
  • Report No.: SAND--95-1750C
  • Report No.: CONF-950982--1
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 100154
  • Archival Resource Key: ark:/67531/metadc626059

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  • August 1, 1995

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  • June 16, 2015, 7:43 a.m.

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  • Aug. 23, 2016, 3:30 p.m.

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Pearton, S.J.; Vartuli, C.B. & Abernathy, C.R. Doping and isolation of GaN, InGaN and InAlN using ion implantation, article, August 1, 1995; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc626059/: accessed September 20, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.