Atomic scale interface structure of In{sub 0.2}Ga{sub 0.8}As/GaAs strained layers studied by cross-sectional scanning tunneling microscopy

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A molecular beam epitaxy-grown In{sub 0.2}Ga{sub 0.8}As/GaAs strained layer structure has been studied by scanning tunneling microscopy in cross-section on the (110) cleavage plane perpendicular to [001] the growth direction. Individual indium atoms were differentially imaged in the group III sublattice, allowing, a direct observation of the interface roughness due to the indium compositional fluctuation. In the In{sub 0.2}Ga{sub 0.8}As layers, Indium atoms are found in clusters preferentially along the growth direction with each cluster containing 2--3 indium atoms. Indium segregation induced asymmetrical interface broadening is studied on an atomic scale. The interface of In{sub 0.2}Ga{sub 0.8}As grown on GaAs ... continued below

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6 p.

Creation Information

Zheng, J.F.; Weber, E.R. & Salmeron, M.B. November 1, 1993.

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  • Zheng, J.F.
  • Weber, E.R. Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Mineral Engineering
  • Salmeron, M.B. Lawrence Berkeley Lab., CA (United States). Materials Sciences Div.

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Description

A molecular beam epitaxy-grown In{sub 0.2}Ga{sub 0.8}As/GaAs strained layer structure has been studied by scanning tunneling microscopy in cross-section on the (110) cleavage plane perpendicular to [001] the growth direction. Individual indium atoms were differentially imaged in the group III sublattice, allowing, a direct observation of the interface roughness due to the indium compositional fluctuation. In the In{sub 0.2}Ga{sub 0.8}As layers, Indium atoms are found in clusters preferentially along the growth direction with each cluster containing 2--3 indium atoms. Indium segregation induced asymmetrical interface broadening is studied on an atomic scale. The interface of In{sub 0.2}Ga{sub 0.8}As grown on GaAs is sharp within 2--4 atomic layers. The interface of GaAs grown on In{sub 0.2}Ga{sub 0.8}As is found to be broadened to about 5--10 atomic layers. The atomic scale fluctuation due to indium distribution is about 20 {angstrom} alone the interface in this case. The authors conclude that clustering and segregation are the main reason for the In{sub 0.2}Ga{sub 0.8}As/GaAs interface roughness.

Physical Description

6 p.

Notes

OSTI as DE96000127

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  • Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 29 Nov - 3 Dec 1993

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  • Other: DE96000127
  • Report No.: LBL--35470
  • Report No.: CONF-931108--115
  • Grant Number: AC03-76SF00098
  • DOI: 10.2172/106626 | External Link
  • Office of Scientific & Technical Information Report Number: 106626
  • Archival Resource Key: ark:/67531/metadc626051

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  • November 1, 1993

Added to The UNT Digital Library

  • June 16, 2015, 7:43 a.m.

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  • April 4, 2016, 9:04 p.m.

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Zheng, J.F.; Weber, E.R. & Salmeron, M.B. Atomic scale interface structure of In{sub 0.2}Ga{sub 0.8}As/GaAs strained layers studied by cross-sectional scanning tunneling microscopy, report, November 1, 1993; California. (digital.library.unt.edu/ark:/67531/metadc626051/: accessed November 19, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.