Oxidation and creep behavior of Mo*5*Si*3* based materials

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Mo{sub 5}Si{sub 3} shows promise as a high temperature creep resistant material. The high temperature oxidation resistance of Mo{sub 5}Si{sub 3} has been found to be poor, however, limiting its use in oxidizing atmospheres. Undoped Mo{sub 5}Si{sub 3} exhibits mass loss in the temperature range 800{degrees}-1200{degrees}C due to volatilization of molybdenum oxide, indicating that the silica scale does not provide a passivating layer. The addition of boron results in protective scale formation and parabolic oxidation kinetics in the temperature range of 1050{degrees}-1300{degrees}C. The oxidation rate of Mo{sub 5}Si{sub 3} was decreased by 5 orders of magnitude at 1200{degrees}C by doping … continued below

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161 p.

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Meyer, Mitch June 19, 1995.

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This thesis or dissertation is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by the UNT Libraries Government Documents Department to the UNT Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 69 times. More information about this document can be viewed below.

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  • Ames Laboratory
    Publisher Info: Ames Lab., IA (United States)
    Place of Publication: Iowa

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Mo{sub 5}Si{sub 3} shows promise as a high temperature creep resistant material. The high temperature oxidation resistance of Mo{sub 5}Si{sub 3} has been found to be poor, however, limiting its use in oxidizing atmospheres. Undoped Mo{sub 5}Si{sub 3} exhibits mass loss in the temperature range 800{degrees}-1200{degrees}C due to volatilization of molybdenum oxide, indicating that the silica scale does not provide a passivating layer. The addition of boron results in protective scale formation and parabolic oxidation kinetics in the temperature range of 1050{degrees}-1300{degrees}C. The oxidation rate of Mo{sub 5}Si{sub 3} was decreased by 5 orders of magnitude at 1200{degrees}C by doping with less than two weight percent boron. Boron doping eliminates catastrophic {open_quote}pest{close_quote} oxidation at 800{degrees}C. The mechanism for improved oxidation resistance of boron doped Mo{sub 5}Si{sub 3} is due to scale modification by boron.

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161 p.

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OSTI as DE96000219

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  • Other Information: TH: Thesis (Ph.D.)

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  • Other: DE96000219
  • Report No.: IS-T--1737
  • Grant Number: W-7405-ENG-82
  • Office of Scientific & Technical Information Report Number: 108132
  • Archival Resource Key: ark:/67531/metadc626037

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  • June 19, 1995

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  • June 16, 2015, 7:43 a.m.

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  • May 22, 2020, 5:45 p.m.

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Meyer, Mitch. Oxidation and creep behavior of Mo*5*Si*3* based materials, thesis or dissertation, June 19, 1995; Iowa. (https://digital.library.unt.edu/ark:/67531/metadc626037/: accessed March 29, 2024), University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu; crediting UNT Libraries Government Documents Department.

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