Mo{sub 5}Si{sub 3} shows promise as a high temperature creep resistant material. The high temperature oxidation resistance of Mo{sub 5}Si{sub 3} has been found to be poor, however, limiting its use in oxidizing atmospheres. Undoped Mo{sub 5}Si{sub 3} exhibits mass loss in the temperature range 800{degrees}-1200{degrees}C due to volatilization of molybdenum oxide, indicating that the silica scale does not provide a passivating layer. The addition of boron results in protective scale formation and parabolic oxidation kinetics in the temperature range of 1050{degrees}-1300{degrees}C. The oxidation rate of Mo{sub 5}Si{sub 3} was decreased by 5 orders of magnitude at 1200{degrees}C by doping …
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Mo{sub 5}Si{sub 3} shows promise as a high temperature creep resistant material. The high temperature oxidation resistance of Mo{sub 5}Si{sub 3} has been found to be poor, however, limiting its use in oxidizing atmospheres. Undoped Mo{sub 5}Si{sub 3} exhibits mass loss in the temperature range 800{degrees}-1200{degrees}C due to volatilization of molybdenum oxide, indicating that the silica scale does not provide a passivating layer. The addition of boron results in protective scale formation and parabolic oxidation kinetics in the temperature range of 1050{degrees}-1300{degrees}C. The oxidation rate of Mo{sub 5}Si{sub 3} was decreased by 5 orders of magnitude at 1200{degrees}C by doping with less than two weight percent boron. Boron doping eliminates catastrophic {open_quote}pest{close_quote} oxidation at 800{degrees}C. The mechanism for improved oxidation resistance of boron doped Mo{sub 5}Si{sub 3} is due to scale modification by boron.
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Meyer, Mitch.Oxidation and creep behavior of Mo*5*Si*3* based materials,
thesis or dissertation,
June 19, 1995;
Iowa.
(https://digital.library.unt.edu/ark:/67531/metadc626037/:
accessed March 29, 2024),
University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu;
crediting UNT Libraries Government Documents Department.