Alternative Window Schemes for CuInSe2-Based Solar Cells Final Report: 3 November 1995-December 1997

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Description

This work demonstrated high-efficiency CIGS cells based on highly resistive ZnO buffer layers grown by MOCVD. One cell based on NREL CIGS and a ZnO buffer layer exhibited an active-area efficiency of nearly 14%. This result is one of the best efficiencies reported for a ''direct'' ZnO/CIGS cell made with a vacuum process.

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Olsen, L.C. (Electronic Materials Laboratory: Washington State University at Tri-Cities) October 26, 1998.

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Description

This work demonstrated high-efficiency CIGS cells based on highly resistive ZnO buffer layers grown by MOCVD. One cell based on NREL CIGS and a ZnO buffer layer exhibited an active-area efficiency of nearly 14%. This result is one of the best efficiencies reported for a ''direct'' ZnO/CIGS cell made with a vacuum process.

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vp.

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OSTI as DE00014401

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  • Other Information: Supercedes report DE00014401; PBD: 26 Oct 1998

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  • Report No.: NREL/SR-520-25613
  • Grant Number: AC36-83CH10093
  • DOI: 10.2172/14401 | External Link
  • Office of Scientific & Technical Information Report Number: 14401
  • Archival Resource Key: ark:/67531/metadc625761

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  • October 26, 1998

Added to The UNT Digital Library

  • June 16, 2015, 7:43 a.m.

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  • March 30, 2016, 12:06 p.m.

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Olsen, L.C. (Electronic Materials Laboratory: Washington State University at Tri-Cities). Alternative Window Schemes for CuInSe2-Based Solar Cells Final Report: 3 November 1995-December 1997, report, October 26, 1998; Golden, Colorado. (digital.library.unt.edu/ark:/67531/metadc625761/: accessed November 23, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.