Studies of ferroelectric heterostructure thin films and interfaces via in situ analytical techniques.

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The science and technology of ferroelectric thin films has experienced an explosive development during the last ten years. Low-density non-volatile ferroelectric random access memories (NVFRAMs) are now incorporated in commercial products such as ''smart cards'', while high permittivity capacitors are incorporated in cellular phones. However, substantial work is still needed to develop materials integration strategies for high-density memories. We have demonstrated that the implementation of complementary in situ characterization techniques is critical to understand film growth and interface processes, which play critical roles in film microstructure and properties. We are using uniquely integrated time of flight ion scattering and recoil ... continued below

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15 p.

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Auciello, O.; Dhote, A.; Gao, Y.; Gruen, D. M.; Im, J.; Irene, E. A. et al. August 30, 1999.

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Description

The science and technology of ferroelectric thin films has experienced an explosive development during the last ten years. Low-density non-volatile ferroelectric random access memories (NVFRAMs) are now incorporated in commercial products such as ''smart cards'', while high permittivity capacitors are incorporated in cellular phones. However, substantial work is still needed to develop materials integration strategies for high-density memories. We have demonstrated that the implementation of complementary in situ characterization techniques is critical to understand film growth and interface processes, which play critical roles in film microstructure and properties. We are using uniquely integrated time of flight ion scattering and recoil spectroscopy (TOF-ISARS) and spectroscopic ellipsometry (SE) techniques to perform in situ, real-time studies of film growth processes in the high background gas pressure required to growth ferroelectric thin films. TOF-ISARS provides information on surface processes, while SE permits the investigation of buried interfaces as they are being formed. Recent studies on SrBi{sub 2}Ta{sub 2}O{sub 9} (SBT) and Ba{sub x}Sr{sub 1{minus}x}TiO{sub 3} (BST) film growth and interface processes are discussed.

Physical Description

15 p.

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OSTI as DE00011953

Medium: P; Size: 15 pages

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  • Integrated Ferroelectric as the Proceedings of the International Workshop on Ferroelectric and High Dielectric Thin Films, San Juan (PR), 05/12/1999--05/15/1999

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  • Report No.: ANL/MSD/CP-99947
  • Grant Number: W-31109-ENG-38
  • Office of Scientific & Technical Information Report Number: 11953
  • Archival Resource Key: ark:/67531/metadc625466

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  • August 30, 1999

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  • June 16, 2015, 7:43 a.m.

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  • April 7, 2017, 3:11 p.m.

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Auciello, O.; Dhote, A.; Gao, Y.; Gruen, D. M.; Im, J.; Irene, E. A. et al. Studies of ferroelectric heterostructure thin films and interfaces via in situ analytical techniques., article, August 30, 1999; Illinois. (digital.library.unt.edu/ark:/67531/metadc625466/: accessed September 21, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.