Utilization of amorphous silicon carbide (a-Si:C:H) as a resistive layer in gas microstrip detectors

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Thin semiconducting films of hydrogenated amorphous silicon (a-Si:H) and its carbon alloy (a-Si:C:H) were applied to gas microstrip detectors in order to control gain instabilities due to charges on the substrate. Thin ({approximately}100nm) layers of a-Si:H or p-doped a-Si:C:H were placed either over or under the electrodes using the plasma enhanced chemical vapor deposition (PECVD) technique to provide the substrate with a suitable surface conductivity. By changing the carbon content and boron doping density, the sheet resistance of the a-Si:C:H coating could be successfully controlled in the range of 10{sup 12} {approximately} 10{sup 17} {Omega}/{four_gradient}, and the light sensitivity, which ... continued below

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9 p.

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Hong, W.S.; Cho, H.S.; Perez-Mendez, V. & Gong, W.G. April 1, 1995.

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Thin semiconducting films of hydrogenated amorphous silicon (a-Si:H) and its carbon alloy (a-Si:C:H) were applied to gas microstrip detectors in order to control gain instabilities due to charges on the substrate. Thin ({approximately}100nm) layers of a-Si:H or p-doped a-Si:C:H were placed either over or under the electrodes using the plasma enhanced chemical vapor deposition (PECVD) technique to provide the substrate with a suitable surface conductivity. By changing the carbon content and boron doping density, the sheet resistance of the a-Si:C:H coating could be successfully controlled in the range of 10{sup 12} {approximately} 10{sup 17} {Omega}/{four_gradient}, and the light sensitivity, which causes the resistivity to vary with ambient light conditions, was minimized. An avalanche gain of 5000 and energy resolution of 20% FWHM were achieved and the gain remained constant over a week of operation. A-Si:C:H film is an attractive alternative to ion-implanted or semiconducting glass due to the wide range of resistivities possible and the feasibility of making deposits over a large area at low cost.

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9 p.

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INIS; OSTI as DE95014873

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  • Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 17-21 Apr 1995

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  • Other: DE95014873
  • Report No.: LBL--37084
  • Report No.: CONF-950412--31
  • Grant Number: AC03-76SF00098
  • Office of Scientific & Technical Information Report Number: 102320
  • Archival Resource Key: ark:/67531/metadc625105

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  • April 1, 1995

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  • June 16, 2015, 7:43 a.m.

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  • April 5, 2016, 11:07 a.m.

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Hong, W.S.; Cho, H.S.; Perez-Mendez, V. & Gong, W.G. Utilization of amorphous silicon carbide (a-Si:C:H) as a resistive layer in gas microstrip detectors, article, April 1, 1995; California. (digital.library.unt.edu/ark:/67531/metadc625105/: accessed August 17, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.