A Novel Non-Destructive Silicon-on-Insulator Nonvolatile Memory - LDRD 99-0750 Final Report

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Defects in silicon-on-insulator (SOI) buried oxides are normally considered deleterious to device operation. Similarly, exposing devices to hydrogen at elevated temperatures often can lead to radiation-induced charge buildup. However, in this work, we take advantage of as-processed defects in SOI buried oxides and moderate temperature hydrogen anneals to generate mobile protons in the buried oxide to form the basis of a ''protonic'' nonvolatile memory. Capacitors and fully-processed transistors were fabricated. SOI buried oxides are exposed to hydrogen at moderate temperatures using a variety of anneal conditions to optimize the density of mobile protons. A fast ramp cool down anneal was ... continued below

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40 p.

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DRAPER,BRUCE L.; FLEETWOOD,D. M.; MEISENHEIMER,TIMOTHY L.; MURRAY,JAMES R.; SCHWANK,JAMES R.; SHANEYFELT,MARTY R. et al. November 1, 1999.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

Defects in silicon-on-insulator (SOI) buried oxides are normally considered deleterious to device operation. Similarly, exposing devices to hydrogen at elevated temperatures often can lead to radiation-induced charge buildup. However, in this work, we take advantage of as-processed defects in SOI buried oxides and moderate temperature hydrogen anneals to generate mobile protons in the buried oxide to form the basis of a ''protonic'' nonvolatile memory. Capacitors and fully-processed transistors were fabricated. SOI buried oxides are exposed to hydrogen at moderate temperatures using a variety of anneal conditions to optimize the density of mobile protons. A fast ramp cool down anneal was found to yield the maximum number of mobile protons. Unfortunately, we were unable to obtain uniform mobile proton concentrations across a wafer. Capacitors were irradiated to investigate the potential use of protonic memories for space and weapon applications. Irradiating under a negative top-gate bias or with no applied bias was observed to cause little degradation in the number of mobile protons. However, irradiating to a total dose of 100 krad(SiO{sub 2}) under a positive top-gate bias caused approximately a 100% reduction in the number of mobile protons. Cycling capacitors up to 10{sup 4} cycles had little effect on the switching characteristics. No change in the retention characteristics were observed for times up to 3 x 10{sup 4} s for capacitors stored unbiased at 200 C. These results show the proof-of-concept for a protonic nonvolatile memory. Two memory architectures are proposed for a protonic non-destructive, nonvolatile memory.

Physical Description

40 p.

Notes

OSTI as DE00014811

Medium: P; Size: 40 pages

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  • Other Information: PBD: 1 Nov 1999

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  • Report No.: SAND99-2797
  • Grant Number: AC04-94AL85000
  • DOI: 10.2172/14811 | External Link
  • Office of Scientific & Technical Information Report Number: 14811
  • Archival Resource Key: ark:/67531/metadc624955

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  • November 1, 1999

Added to The UNT Digital Library

  • June 16, 2015, 7:43 a.m.

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  • April 12, 2017, 2:48 p.m.

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DRAPER,BRUCE L.; FLEETWOOD,D. M.; MEISENHEIMER,TIMOTHY L.; MURRAY,JAMES R.; SCHWANK,JAMES R.; SHANEYFELT,MARTY R. et al. A Novel Non-Destructive Silicon-on-Insulator Nonvolatile Memory - LDRD 99-0750 Final Report, report, November 1, 1999; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc624955/: accessed September 22, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.