Characterization of the Effect of Au/Al Bondpad Corrosion on Microelectronic Device Reliability

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Description

A methodology has been established to predict the effect of atmospheric corrosion on the reliability of plastic encapsulated microelectronic (PEM) devices. New experimental techniques were developed to directly characterize the Al/Au wirebond interface where corrosion primarily occurs. A deterministic empirical model describing wirebond degradation as a function of environmental conditions was generated. To demonstrate how this model can be used to determine corrosion effects on device reliability, a numerical simulation was performed on a three-lead voltage reference device. Surface reaction rate constants, environmental variables and the defect characteristics of the encapsulant were treated as distributed parameters. A Sandia-developed analytical framework ... continued below

Physical Description

12 p.

Creation Information

BRAITHWAITE,JEFFREY W.; MICHAEL,JOSEPH R.; PETERSON,DAVID W.; ROBINSON,DAVID G.; SORENSEN,NEIL R. & STRIZICH,M.P. October 7, 1999.

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This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this article can be viewed below.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

A methodology has been established to predict the effect of atmospheric corrosion on the reliability of plastic encapsulated microelectronic (PEM) devices. New experimental techniques were developed to directly characterize the Al/Au wirebond interface where corrosion primarily occurs. A deterministic empirical model describing wirebond degradation as a function of environmental conditions was generated. To demonstrate how this model can be used to determine corrosion effects on device reliability, a numerical simulation was performed on a three-lead voltage reference device. Surface reaction rate constants, environmental variables and the defect characteristics of the encapsulant were treated as distributed parameters. A Sandia-developed analytical framework (CRAX{trademark}) was used to include uncertainty in the analysis and directly calculate reliability.

Physical Description

12 p.

Notes

OSTI as DE00014091

Medium: P; Size: 12 pages

Source

  • 196th Meeting of the Electrochemical Society, Honolulu, HI (US), 10/17/1999--10/22/1999

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Identifier

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  • Report No.: SAND99-2621C
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 14091
  • Archival Resource Key: ark:/67531/metadc624918

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Creation Date

  • October 7, 1999

Added to The UNT Digital Library

  • June 16, 2015, 7:43 a.m.

Description Last Updated

  • April 6, 2017, 7:56 p.m.

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BRAITHWAITE,JEFFREY W.; MICHAEL,JOSEPH R.; PETERSON,DAVID W.; ROBINSON,DAVID G.; SORENSEN,NEIL R. & STRIZICH,M.P. Characterization of the Effect of Au/Al Bondpad Corrosion on Microelectronic Device Reliability, article, October 7, 1999; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc624918/: accessed September 19, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.