Identifying electronic properties relevant to improving stability in a-Si:H-based cells and overall performance in a-Si,Ge:H-based cells. Annual subcontract report, April 18, 1994--April 17, 1995

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This report describes work performed by the University of Oregon focusing on the characterization and evaluation of amorphous semiconductor materials produced by novel deposition conditions and/or methods. The results are based on a variety of junction capacitance techniques: admittance spectroscopy, transient photocapacitance (and photocurrent), and drive-level capacitance profiling. These methods allow the determination of deep defect densities and their energy distributions, Urbach bandtail energies, and, in some cases, {mu}{tau} products for hole transport. During this phase, the authors completed several tasks: (1) they carried out measurements on a-Si, Ge:H alloy samples produced at Harvard University by a cathodic glow discharge ... continued below

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34 p./1.0 Mb

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Cohen, J.D. November 1, 1995.

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Description

This report describes work performed by the University of Oregon focusing on the characterization and evaluation of amorphous semiconductor materials produced by novel deposition conditions and/or methods. The results are based on a variety of junction capacitance techniques: admittance spectroscopy, transient photocapacitance (and photocurrent), and drive-level capacitance profiling. These methods allow the determination of deep defect densities and their energy distributions, Urbach bandtail energies, and, in some cases, {mu}{tau} products for hole transport. During this phase, the authors completed several tasks: (1) they carried out measurements on a-Si, Ge:H alloy samples produced at Harvard University by a cathodic glow discharge process, measurement indicated a smaller value of ({mu}{tau}){sub h} for these samples than would have been expected given their lower defect densities; (2) they characterized several hot-wire a-Si:H samples produced with varying hydrogen levels, studies indicate that hot-wire-produced a-Si:H, with H levels between 2--5 at.% should lead to mid-gap devices with superior properties; (3) they reported some results on a-Si:H glow discharge material grown under hydrogen dilution conditions. Preliminary studies point to film strain as playing a primary role for the observed differences in behavior.

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34 p./1.0 Mb

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OSTI as DE96000467

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  • Other Information: PBD: Nov 1995

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  • Other: DE96000467
  • Report No.: NREL/TP--451-20290
  • Grant Number: AC36-83CH10093
  • DOI: 10.2172/132673 | External Link
  • Office of Scientific & Technical Information Report Number: 132673
  • Archival Resource Key: ark:/67531/metadc624868

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  • November 1, 1995

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  • June 16, 2015, 7:43 a.m.

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Cohen, J.D. Identifying electronic properties relevant to improving stability in a-Si:H-based cells and overall performance in a-Si,Ge:H-based cells. Annual subcontract report, April 18, 1994--April 17, 1995, report, November 1, 1995; Golden, Colorado. (digital.library.unt.edu/ark:/67531/metadc624868/: accessed October 17, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.