Wide-band-gap solar cells with high stabilized performance. Annual subcontract report, July 15, 1994--July 14, 1995 Page: 30 of 86
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0 10 20 30 40 50
60
(a)R=0 db 000
40 -e
4 0 A d s = 2 .7 A
0000000001000000000000000T-
0 0
40 (b) R=10 db
Ads =7.2A
20 - ------ ----------
o< --- ----- -- -
0 20 40 60 80 100 120 140
Time (sec)
Fig. 8 Time evolution of the low density surface layer (d) and bulk
layer (db) thicknesses deduced from RTSE data collected
during the deposition of two a-Si:H films prepared on c-Si
with H2-dilution ratios (a) R = [H2]/[SiH4] = 0 and (b) R
=10, both at 200*C. The results for the deposition with R
=10 exhibit a greater degree of coalescence of initial nuclei.
Both depositions were performed with a fixed rf power flux
of- 70mW/cm2.24
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Wronski, C. R.; Collins, R. W. & Fonash, S. J. Wide-band-gap solar cells with high stabilized performance. Annual subcontract report, July 15, 1994--July 14, 1995, report, November 1, 1995; Golden, Colorado. (https://digital.library.unt.edu/ark:/67531/metadc624656/m1/30/: accessed April 25, 2024), University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu; crediting UNT Libraries Government Documents Department.