Status of ion implantation doping and isolation of III-V nitrides

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Ion implantation doping and isolation has played a critical role in the realization of high performance photonic and electronic devices in all mature semiconductor material systems. This is also expected to be the case for the binary III-V nitrides (InN, GaN, and AlN) and their alloys as the epitaxial material quality improves and more advanced device structures are fabricated. With this in mind, we review the status of implant doping and isolation of GaN and the ternary alloys AlGaN, InGaN, and InAlN. In particular, we reported on the successful n- and p-type doping of GaN by ion implantation of Mg+P ... continued below

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8 p.

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Zolper, J.C.; Pearton, S.J. & Abernathy, C.R. September 1, 1995.

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This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 46 times . More information about this article can be viewed below.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

Ion implantation doping and isolation has played a critical role in the realization of high performance photonic and electronic devices in all mature semiconductor material systems. This is also expected to be the case for the binary III-V nitrides (InN, GaN, and AlN) and their alloys as the epitaxial material quality improves and more advanced device structures are fabricated. With this in mind, we review the status of implant doping and isolation of GaN and the ternary alloys AlGaN, InGaN, and InAlN. In particular, we reported on the successful n- and p-type doping of GaN by ion implantation of Mg+P and Si, respectively, and subsequent high temperature rapid thermal anneals in excess of 1000{degrees}C. In the area of implant isolation, N-implantation has been shown to compensate both n- and p-type GaN, N and O-implantation effectively compensates InAlN, and InGaN shows limited compensation with either N or F implantation.

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8 p.

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OSTI as DE95017888

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  • 188. meeting of the Electrochemical Society, Chicago, IL (United States), 8-13 Oct 1995

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  • Other: DE95017888
  • Report No.: SAND--95-0949C
  • Report No.: CONF-951007--5
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 110699
  • Archival Resource Key: ark:/67531/metadc624578

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  • September 1, 1995

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  • June 16, 2015, 7:43 a.m.

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  • Aug. 23, 2016, 3:21 p.m.

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Zolper, J.C.; Pearton, S.J. & Abernathy, C.R. Status of ion implantation doping and isolation of III-V nitrides, article, September 1, 1995; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc624578/: accessed October 20, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.