Inductively Coupled Plasma-Induced Etch Damage of GaN p-n Junctions

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Plasma-induced etch damage can degrade the electrical and optical performance of III-V nitride electronic and photonic devices. We have investigated the etch-induced damage of an Inductively Coupled Plasma (ICP) etch system on the electrical performance of mesa-isolated GaN pn-junction diodes. GaN p-i-n mesa diodes were formed by Cl{sub 2}/BCl{sub 3}/Ar ICP etching under different plasma conditions. The reverse leakage current in the mesa diodes showed a strong relationship to chamber pressure, ion energy, and plasma flux. Plasma induced damage was minimized at moderate flux conditions ({le} 500 W), pressures {ge}2 mTorr, and at ion energies below approximately -275 V.

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21 p.

Creation Information

SHUL,RANDY J.; ZHANG,LEI; BACA,ALBERT G.; WILLISON,CHRISTI LEE; HAN,JUNG; PEARTON,S.J. et al. November 3, 1999.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

Plasma-induced etch damage can degrade the electrical and optical performance of III-V nitride electronic and photonic devices. We have investigated the etch-induced damage of an Inductively Coupled Plasma (ICP) etch system on the electrical performance of mesa-isolated GaN pn-junction diodes. GaN p-i-n mesa diodes were formed by Cl{sub 2}/BCl{sub 3}/Ar ICP etching under different plasma conditions. The reverse leakage current in the mesa diodes showed a strong relationship to chamber pressure, ion energy, and plasma flux. Plasma induced damage was minimized at moderate flux conditions ({le} 500 W), pressures {ge}2 mTorr, and at ion energies below approximately -275 V.

Physical Description

21 p.

Notes

INIS; OSTI as DE00014382

Medium: P; Size: 21 pages

Source

  • Journal Name: Journal of Vacuum Science and Technology A; Other Information: Submitted to Journal of Vacuum Science and Technology A

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  • Report No.: SAND99-2842J
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 14382
  • Archival Resource Key: ark:/67531/metadc624355

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  • November 3, 1999

Added to The UNT Digital Library

  • June 16, 2015, 7:43 a.m.

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  • April 7, 2017, 7:21 p.m.

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SHUL,RANDY J.; ZHANG,LEI; BACA,ALBERT G.; WILLISON,CHRISTI LEE; HAN,JUNG; PEARTON,S.J. et al. Inductively Coupled Plasma-Induced Etch Damage of GaN p-n Junctions, article, November 3, 1999; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc624355/: accessed September 24, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.