TEOS reaction rates on SiO{sub 2} at 1000K: Zero-order dependence on hydroxyl coverage and implications for reactions with three-membered siloxane rings

PDF Version Also Available for Download.

Description

We have determined key kinetic parameters for the reaction of TEOS (tetraethylorthosilicate) on SiO{sub 2}. This was accomplished under conditions (20 to 500 mTorr at 1000 K) that pertain directly to TEOS-based CVD (chemical vapor deposition) processes. TEOS reactions were carried out using deuterated silanols (SiOD) on the initial SiO{sub 2} surface. This allowed FTIR (Fourier transform infrared spectroscopy) measurements to distinguish the consumption of SiOD by TEOS from the concurrent formation of SiOH which results from TEOS decomposition at 1000 K. While SiOD consumption did exhibit a first-order dependence on SiOD coverage, SiOH formation exhibited a zero-order dependence on ... continued below

Physical Description

19 p.

Creation Information

Bartram, M.E. & Moffat, H.K. December 1, 1995.

Context

This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this article can be viewed below.

Who

People and organizations associated with either the creation of this article or its content.

Sponsor

Publisher

  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

Provided By

UNT Libraries Government Documents Department

Serving as both a federal and a state depository library, the UNT Libraries Government Documents Department maintains millions of items in a variety of formats. The department is a member of the FDLP Content Partnerships Program and an Affiliated Archive of the National Archives.

Contact Us

What

Descriptive information to help identify this article. Follow the links below to find similar items on the Digital Library.

Description

We have determined key kinetic parameters for the reaction of TEOS (tetraethylorthosilicate) on SiO{sub 2}. This was accomplished under conditions (20 to 500 mTorr at 1000 K) that pertain directly to TEOS-based CVD (chemical vapor deposition) processes. TEOS reactions were carried out using deuterated silanols (SiOD) on the initial SiO{sub 2} surface. This allowed FTIR (Fourier transform infrared spectroscopy) measurements to distinguish the consumption of SiOD by TEOS from the concurrent formation of SiOH which results from TEOS decomposition at 1000 K. While SiOD consumption did exhibit a first-order dependence on SiOD coverage, SiOH formation exhibited a zero-order dependence on the total coverage of hydroxyl groups. This suggests that reactions with hydroxyl groups alone can not account for all of the TEOS decomposition reactions at 1000 K. Since the low coverage of two-membered siloxane ((Si-O){sub 2}) rings was consumed during the initial TEOS exposure, siloxane (Si-O-Si) bridges in three-membered siloxane ((Si-O){sub 3}) rings may be the additional species responsible for the constant rate of TEOS decomposition. However, it is not conclusive that this type of site-specific mechanism controls the chemistry. The data may also be explained with a site-independent mechanism in which intramolecular decomposition of TEOS on the surface provides a common rate-determining step for subsequent consumption of hydroxyls and siloxane bridges on SiO{sub 2}. Regardless of the specific mechanism, our results predict that deposition rates will be insensitive to the relative coverages of siloxane bridges and hydroxyls on SiO{sub 2}. Therefore, a precise knowledge of the coverages of these species on SiO{sub 2} is not essential for modeling thermal TEOS decomposition rates.

Physical Description

19 p.

Notes

OSTI as DE96002543

Source

  • 42. National Symposium of the American Vacuum Society (AVS), Minneapolis, MN (United States), 16-20 Oct 1995

Language

Item Type

Identifier

Unique identifying numbers for this article in the Digital Library or other systems.

  • Other: DE96002543
  • Report No.: SAND--95-1049C
  • Report No.: CONF-951030--2
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 135078
  • Archival Resource Key: ark:/67531/metadc624307

Collections

This article is part of the following collection of related materials.

Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

What responsibilities do I have when using this article?

When

Dates and time periods associated with this article.

Creation Date

  • December 1, 1995

Added to The UNT Digital Library

  • June 16, 2015, 7:43 a.m.

Description Last Updated

  • April 14, 2016, 7:08 p.m.

Usage Statistics

When was this article last used?

Yesterday: 0
Past 30 days: 0
Total Uses: 2

Interact With This Article

Here are some suggestions for what to do next.

Start Reading

PDF Version Also Available for Download.

Citations, Rights, Re-Use

Bartram, M.E. & Moffat, H.K. TEOS reaction rates on SiO{sub 2} at 1000K: Zero-order dependence on hydroxyl coverage and implications for reactions with three-membered siloxane rings, article, December 1, 1995; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc624307/: accessed November 22, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.