Diffusion, precipitation, and cavity-wall reactions of ion-implanted gold in silicon

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Description

The diffusion of Au in Si and its binding to cavities and precipitates of the equilibrium Au-Si phase were investigated in the temperature range 1023-1123 K using ion implantation and Rutherford backscattering spectrometry. The diffusivity-solubility product for interstitial Au was found to be about an order of magnitude greater than the extrapolation of previous, less direct determinations at higher temperatures. Chemisorption on cavity walls was shown to be more stable than Au-Si precipitation by 0.1-0.2 eV in the investigated temperature range, indicating that cavities are effective gettering centers for Au impurities.

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6 p.

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Myers, S.M. & Petersen, G.A. December 31, 1995.

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This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this article can be viewed below.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

The diffusion of Au in Si and its binding to cavities and precipitates of the equilibrium Au-Si phase were investigated in the temperature range 1023-1123 K using ion implantation and Rutherford backscattering spectrometry. The diffusivity-solubility product for interstitial Au was found to be about an order of magnitude greater than the extrapolation of previous, less direct determinations at higher temperatures. Chemisorption on cavity walls was shown to be more stable than Au-Si precipitation by 0.1-0.2 eV in the investigated temperature range, indicating that cavities are effective gettering centers for Au impurities.

Physical Description

6 p.

Notes

OSTI as DE96003647

Source

  • Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 27 Nov - 1 Dec 1995

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  • Other: DE96003647
  • Report No.: SAND--95-1513C
  • Report No.: CONF-951155--18
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 167223
  • Archival Resource Key: ark:/67531/metadc624226

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  • December 31, 1995

Added to The UNT Digital Library

  • June 16, 2015, 7:43 a.m.

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  • April 14, 2016, 8:24 p.m.

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Myers, S.M. & Petersen, G.A. Diffusion, precipitation, and cavity-wall reactions of ion-implanted gold in silicon, article, December 31, 1995; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc624226/: accessed September 22, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.