Thin-Film CIGS Photovoltaic Technology; Annual Technical Report, Phase I; 16 April 1998 - 15 April 1999

PDF Version Also Available for Download.

Description

This report describes work performed by Energy Photovoltaics, Inc. (EPV) under Phase I of this subcontract. EPV's new FORNAX process for CIGS formation is capable of producing devices with high V{sub oc} (>600 mV) and no dark aging effects. Parameters of the best device so far are V{sub oc} = 611 mV, J{sub sc} = 27.5 mA/cm{sup 2}, FF = 74.5%, and efficiency = 12.5%. A 34-cm{sup 2} 16-cell minimodule was produced using FORNAX CIGS with V{sub oc} = 9.58 V, I{sub sc} = 52.0 mA, FF = 69.8%, and efficiency = 10.2%. A new version of EPV's linear evaporation ... continued below

Physical Description

29 pages

Creation Information

Delahoy, A. E.; Chorobski, D.; Ziobro, F. & Kiss, Z. J. (Energy Photovoltaics, Inc.) September 30, 1999.

Context

This report is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this report can be viewed below.

Who

People and organizations associated with either the creation of this report or its content.

Sponsor

Publisher

Provided By

UNT Libraries Government Documents Department

Serving as both a federal and a state depository library, the UNT Libraries Government Documents Department maintains millions of items in a variety of formats. The department is a member of the FDLP Content Partnerships Program and an Affiliated Archive of the National Archives.

Contact Us

What

Descriptive information to help identify this report. Follow the links below to find similar items on the Digital Library.

Description

This report describes work performed by Energy Photovoltaics, Inc. (EPV) under Phase I of this subcontract. EPV's new FORNAX process for CIGS formation is capable of producing devices with high V{sub oc} (>600 mV) and no dark aging effects. Parameters of the best device so far are V{sub oc} = 611 mV, J{sub sc} = 27.5 mA/cm{sup 2}, FF = 74.5%, and efficiency = 12.5%. A 34-cm{sup 2} 16-cell minimodule was produced using FORNAX CIGS with V{sub oc} = 9.58 V, I{sub sc} = 52.0 mA, FF = 69.8%, and efficiency = 10.2%. A new version of EPV's linear evaporation source was developed with improved rate and uniformity for Cu deposition over a width of 45 cm. Using the new linear source, the FORNAX process was implemented on 0.43-m{sub 2} substrates in EPV's CIGS pilot line, with V{sub oc} = 537 mV and FF = 70.3% being achieved on a device. The EPV Subteam of the National CIS R&D Team has produced Cd-free ZnO/CIGS devices on NREL CIGS using the ROMEAO process (reaction of metal and atomic oxygen) for ZnO deposition. After soaking, the best device exhibited a V{sub oc} of 565 mV and an efficiency of 12.3%. Novel bias drive methods were devised for field soaking/anti-soaking experiments as a function of time and temperature. Scaling laws and an activation energy of 0.51 eV were found. Thermally stimulated capacitance reveals the existence of three distinct contributions to ZnO/CIGS device capacitance, two appearing to be gap-state effects and one related to net doping concentration. The coating time of the sputtered pilot-line ZnO:Al has been reduced by a factor of 3 while maintaining film quality. The deposition rate is 48 A s{sup -1}. Plans are under way to increase the substrate size from 0.43 m{sup 2} to 0.79 m{sup 2}.

Physical Description

29 pages

Notes

OSTI as DE00014448

Source

  • Other Information: Supercedes report DE00014448; PBD: 30 Sep 1999

Language

Item Type

Identifier

Unique identifying numbers for this report in the Digital Library or other systems.

  • Report No.: NREL/SR-520-26882
  • Grant Number: AC36-99GO10337
  • DOI: 10.2172/14448 | External Link
  • Office of Scientific & Technical Information Report Number: 14448
  • Archival Resource Key: ark:/67531/metadc624100

Collections

This report is part of the following collection of related materials.

Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

What responsibilities do I have when using this report?

When

Dates and time periods associated with this report.

Creation Date

  • September 30, 1999

Added to The UNT Digital Library

  • June 16, 2015, 7:43 a.m.

Description Last Updated

  • March 31, 2016, 5:50 p.m.

Usage Statistics

When was this report last used?

Yesterday: 0
Past 30 days: 0
Total Uses: 9

Interact With This Report

Here are some suggestions for what to do next.

Start Reading

PDF Version Also Available for Download.

International Image Interoperability Framework

IIF Logo

We support the IIIF Presentation API

Delahoy, A. E.; Chorobski, D.; Ziobro, F. & Kiss, Z. J. (Energy Photovoltaics, Inc.). Thin-Film CIGS Photovoltaic Technology; Annual Technical Report, Phase I; 16 April 1998 - 15 April 1999, report, September 30, 1999; Golden, Colorado. (digital.library.unt.edu/ark:/67531/metadc624100/: accessed October 23, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.