Unipolar Complementary Circuits Using Double Electron Layer Tunneling Tansistors

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We demonstrate unipolar complementary circuits consisting of a pair of resonant tunneling transistors based on the gate control of 2D-2D interlayer tunneling, where a single transistor - in addition to exhibiting a welldefined negative-differential-resistance can be operated with either positive or negative transconductance. Details of the device operation are analyzed in terms of the quantum capacitance effect and band-bending in a double quantum well structure, and show good agreement with experiment. Application of resonant tunneling complementary logic is discussed by demonstrating complementary static random access memory using two devices connected in series.

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Blount, M.A.; Hafich, M.J.; Moon, J.S.; Reno, J.L. & Simmons, J.A. October 19, 1998.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Laboratories, Albuquerque, NM, and Livermore, CA
    Place of Publication: Albuquerque, New Mexico

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Description

We demonstrate unipolar complementary circuits consisting of a pair of resonant tunneling transistors based on the gate control of 2D-2D interlayer tunneling, where a single transistor - in addition to exhibiting a welldefined negative-differential-resistance can be operated with either positive or negative transconductance. Details of the device operation are analyzed in terms of the quantum capacitance effect and band-bending in a double quantum well structure, and show good agreement with experiment. Application of resonant tunneling complementary logic is discussed by demonstrating complementary static random access memory using two devices connected in series.

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  • Journal Name: Applied Physics Letters

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  • Other: DE00001083
  • Report No.: SAND98-2354J
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 1083
  • Archival Resource Key: ark:/67531/metadc623905

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  • October 19, 1998

Added to The UNT Digital Library

  • June 16, 2015, 7:43 a.m.

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  • Dec. 2, 2016, 4:45 p.m.

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Blount, M.A.; Hafich, M.J.; Moon, J.S.; Reno, J.L. & Simmons, J.A. Unipolar Complementary Circuits Using Double Electron Layer Tunneling Tansistors, article, October 19, 1998; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc623905/: accessed October 23, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.