Phase Separation and Facet Formation during the Growth of (GaAs)1-x(Ge2)x Alloy Layers by Metal Organic Vapour Phase Epitaxy

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Metal organic vapour phase epitaxy (GaAs)1-x(Ge2)x alloy layers, 0<x<0.22, were grown at temperatures between 640 and 690 C, on vicinal (001) GaAs substrates. Phase separation occurred in all the layers. The phase-separated microstructure changed with alloy composition, growth temperature, and substrate orientation. In x {approx} 0.1 layers grown at 640 C, Ge segregation occurred on {l_brace}115{r_brace}B planes associated with a {l_brace}115{r_brace}B surface faceting. Increase in growth temperature led to the formation of large, (001)-oriented, irregular-shaped platelets of Ge-rich material. Growth on {l_brace}115{r_brace}B substrates resulted in a ''natural superlattice'' of GaAs/Ge along the growth direction.

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Norman, A. G.; Olson, J. M.; Geisz, J. F.; Moutinho, H. R.; Mason, A.; Al-Jassim, M. M. et al. September 13, 1999.

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Metal organic vapour phase epitaxy (GaAs)1-x(Ge2)x alloy layers, 0<x<0.22, were grown at temperatures between 640 and 690 C, on vicinal (001) GaAs substrates. Phase separation occurred in all the layers. The phase-separated microstructure changed with alloy composition, growth temperature, and substrate orientation. In x {approx} 0.1 layers grown at 640 C, Ge segregation occurred on {l_brace}115{r_brace}B planes associated with a {l_brace}115{r_brace}B surface faceting. Increase in growth temperature led to the formation of large, (001)-oriented, irregular-shaped platelets of Ge-rich material. Growth on {l_brace}115{r_brace}B substrates resulted in a ''natural superlattice'' of GaAs/Ge along the growth direction.

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OSTI as DE00012158

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  • Microscopy of Semiconducting Materials XI, Oxford (GB), 03/22/1999--03/25/1999; Other Information: Supercedes report DE00012158; PBD: 13 Sep 1999

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  • Report No.: NREL/CP-520-26319
  • Grant Number: AC36-99GO10337
  • Office of Scientific & Technical Information Report Number: 12158
  • Archival Resource Key: ark:/67531/metadc623697

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  • September 13, 1999

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  • June 16, 2015, 7:43 a.m.

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  • March 31, 2016, 3:21 p.m.

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Norman, A. G.; Olson, J. M.; Geisz, J. F.; Moutinho, H. R.; Mason, A.; Al-Jassim, M. M. et al. Phase Separation and Facet Formation during the Growth of (GaAs)1-x(Ge2)x Alloy Layers by Metal Organic Vapour Phase Epitaxy, article, September 13, 1999; Golden, Colorado. (digital.library.unt.edu/ark:/67531/metadc623697/: accessed September 19, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.