In-situ, real-time, studies of film growth processes using ion scattering and direct recoil spectroscopy techniques.

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Time-of-flight ion scattering and recoil spectroscopy (TOF-ISARS) enables the characterization of the composition and structure of surfaces with 1-2 monolayer specificity. It will be shown that surface analysis is possible at ambient pressures greater than 3 mTorr using TOF-ISARS techniques; allowing for real-time, in situ studies of film growth processes. TOF-ISARS comprises three analytical techniques: ion scattering spectroscopy (ISS), which detects the backscattered primary ion beam; direct recoil spectroscopy (DRS), which detects the surface species recoiled into the forward scattering direction; and mass spectroscopy of recoiled ions (MSRI), which is 3 variant of DRS capable of isotopic resolution for all ... continued below

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15 p.

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Smentkowski, V. S. April 22, 1999.

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Description

Time-of-flight ion scattering and recoil spectroscopy (TOF-ISARS) enables the characterization of the composition and structure of surfaces with 1-2 monolayer specificity. It will be shown that surface analysis is possible at ambient pressures greater than 3 mTorr using TOF-ISARS techniques; allowing for real-time, in situ studies of film growth processes. TOF-ISARS comprises three analytical techniques: ion scattering spectroscopy (ISS), which detects the backscattered primary ion beam; direct recoil spectroscopy (DRS), which detects the surface species recoiled into the forward scattering direction; and mass spectroscopy of recoiled ions (MSRI), which is 3 variant of DRS capable of isotopic resolution for all surface species--including H and He. The advantages and limitations of each of these techniques will be discussed. The use of the three TOF-ISARS methods for real-time, in situ film growth studies at high ambient pressures will be illustrated. It will be shown that MSRI analysis is possible during sputter deposition. It will be also be demonstrated that the analyzer used for MSRI can also be used for time of flight secondary ion mass spectroscopy (TOF-SIMS) under high vacuum conditions. The use of a single analyzer to perform the complimentary surface analytical techniques of MSRI and SIMS is unique. The dwd functionality of the MSRI analyzer provides surface information not obtained when either MSRI or SIMS is used independently.

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15 p.

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OSTI as DE00011186

Medium: P; Size: 15 pages

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  • Materials Research Society Meeting, San Francisco, CA (US), 04/05/1999--04/09/1999

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  • Report No.: ANL/CHM/CP-97998
  • Grant Number: W-31109-ENG-38
  • Office of Scientific & Technical Information Report Number: 11186
  • Archival Resource Key: ark:/67531/metadc623677

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • April 22, 1999

Added to The UNT Digital Library

  • June 16, 2015, 7:43 a.m.

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  • April 7, 2017, 2:59 p.m.

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Smentkowski, V. S. In-situ, real-time, studies of film growth processes using ion scattering and direct recoil spectroscopy techniques., article, April 22, 1999; (digital.library.unt.edu/ark:/67531/metadc623677/: accessed December 14, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.