Residual stress, mechanical behavior and electrical properties of Cu/Nb thin-film multilayers

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Effect of compositional wavelength (modulation) on residual stress, electrical resistivities and mechanical properties of Cu/Nb thin-film multilayers sputtered onto single-crystal Si substrates, was evaluated. Electrical resistivities were measured down to 4 K using a standard 4-point probe. Differential specimen curvature was used to determine residual stress, and a microprobe was used to obtain hardness and elastic modulus. Profilometry, ion-beam analysis and TEM were used. Hardness of the Cu-Nb multilayers increased with decreasing compositional wavelength so that the layered structures had hardness values in excess of either constituent and the hardness predicted by the rule of mixtures. A peak in net ... continued below

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10 p.

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Griffin, A. J., Jr.; Hundley, M. F.; Jervis, T. R.; Kung, H. H.; Scarborough, W. K.; Walter, K. C. et al. September 1995.

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Effect of compositional wavelength (modulation) on residual stress, electrical resistivities and mechanical properties of Cu/Nb thin-film multilayers sputtered onto single-crystal Si substrates, was evaluated. Electrical resistivities were measured down to 4 K using a standard 4-point probe. Differential specimen curvature was used to determine residual stress, and a microprobe was used to obtain hardness and elastic modulus. Profilometry, ion-beam analysis and TEM were used. Hardness of the Cu-Nb multilayers increased with decreasing compositional wavelength so that the layered structures had hardness values in excess of either constituent and the hardness predicted by the rule of mixtures. A peak in net residual compressive stress of the multilayers was observed at a compositional wavelength of 100 nm. No resistivity plateau was observed within the composition wavelength range studied.

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10 p.

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OSTI as DE95016888

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  • Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 17-21 Apr 1995

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  • Other: DE95016888
  • Report No.: LA-UR--95-2422
  • Report No.: CONF-950412--44
  • Grant Number: W-7405-ENG-36
  • Office of Scientific & Technical Information Report Number: 101339
  • Archival Resource Key: ark:/67531/metadc623590

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Office of Scientific & Technical Information Technical Reports

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Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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  • September 1995

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  • June 16, 2015, 7:43 a.m.

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  • Feb. 29, 2016, 7:18 p.m.

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Griffin, A. J., Jr.; Hundley, M. F.; Jervis, T. R.; Kung, H. H.; Scarborough, W. K.; Walter, K. C. et al. Residual stress, mechanical behavior and electrical properties of Cu/Nb thin-film multilayers, article, September 1995; New Mexico. (digital.library.unt.edu/ark:/67531/metadc623590/: accessed April 24, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.