X-ray standing wave study of the Bi/GaAs and Bi/GaP interfaces

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Interfaces are one of the most important elements determining the characteristics of electronic devices. Composite semiconductors, specifically the III-V family, are technologically attractive because of their mobility and optical properties, and also because they offer the possibility of engineering such properties as the size of the band gap. Nevertheless, Si has remained the most utilized semiconductor material, primarily because the fabrication of practical MOSFETs with III-V semiconductors remains elusive. Examples of such complex interfaces are the structures formed by one monolayer of Bi on the (110) surface of GaAs and GaP. While better matched Column V elements form epitaxial continuous ... continued below

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216 p.

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Herrera-Gomez, A. April 1, 1994.

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  • Stanford University
    Publisher Info: Stanford Univ., CA (United States)
    Place of Publication: California

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Description

Interfaces are one of the most important elements determining the characteristics of electronic devices. Composite semiconductors, specifically the III-V family, are technologically attractive because of their mobility and optical properties, and also because they offer the possibility of engineering such properties as the size of the band gap. Nevertheless, Si has remained the most utilized semiconductor material, primarily because the fabrication of practical MOSFETs with III-V semiconductors remains elusive. Examples of such complex interfaces are the structures formed by one monolayer of Bi on the (110) surface of GaAs and GaP. While better matched Column V elements form epitaxial continuous monolayers on III-V semiconductor (110) surfaces, Bi is too large to accommodate on GaAs and GaP surfaces with long range order, and vacancies appear to allow relaxation. For the ideal systems, symmetry imposes the presence of only two nonequivalent adatom sites. However, for Bi/GaAs and Bi/GaP, more than two different sites are present because the position of Bi atoms next to a vacancy is not necessarily equivalent to that between other Bi atoms. The geometry of the Bi/GaAs and Bi/GaP systems was determined here by triangulating XSW results from three Bragg planes. A methodology was developed that provides an intrinsic check of the validity of assuming two sites for the overlayer structures. An experimental method was developed that allows the three reflections to be measured on the same sample, thus reducing the number of experimental variables, such as the degree of disorder. The traditional method of analysis was not accurate enough for this data, so a more reliable and faster method of data fitting was developed. A configuration used in the present work, which previously has been widely used, presents an intrinsic multireflection problem. This issue is discussed in depth, and the appropriate method is determined for analyzing the data obtained with this configuration.

Physical Description

216 p.

Notes

INIS; OSTI as DE95014374

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  • Other Information: PBD: Apr 1994

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  • Other: DE95014374
  • Report No.: SLAC--438
  • Report No.: SLAC/SSRL--073
  • Grant Number: AC03-76SF00515
  • DOI: 10.2172/108116 | External Link
  • Office of Scientific & Technical Information Report Number: 108116
  • Archival Resource Key: ark:/67531/metadc623441

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  • April 1, 1994

Added to The UNT Digital Library

  • June 16, 2015, 7:43 a.m.

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  • Feb. 17, 2017, 6:06 p.m.

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Herrera-Gomez, A. X-ray standing wave study of the Bi/GaAs and Bi/GaP interfaces, report, April 1, 1994; California. (digital.library.unt.edu/ark:/67531/metadc623441/: accessed October 19, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.