The Growth of InAsSb/InAs/InPSb/InAs Mid-Infrared Emitters by Metal-Organic Chemical Vapor Deposition

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We report on the metal-organic chemical vapor deposition (MOCVD) of strained layer superlattices (SLSs) of InAsSb/InAs/InPSb/InAs as well as mid-infrared optically pumped lasers grown using a high speed rotating disk react,or (RDR). The devices contain AIAsSb cladding layers and strained, type I, InAsSb/InAs/InPSb/InAs strained layer superlattice (SLS) active regions. By changing the layer thickness and composition of the SLS, we have prepared structures with low temperature (<20K) photoluminescence wavelengths ranging from 3.4 to 4.8 pm. The optical properties of the InAsSb/InPSb superlattices revealed an anomalous low energy transition that can be assigned to an antimony-rich, interfacial layer in the superlattice. ... continued below

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6 p.

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BIEFELD,ROBERT M.; PHILLIPS,J.D. & KURTZ,STEVEN R. December 8, 1999.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA (United States)
    Place of Publication: Albuquerque, New Mexico

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We report on the metal-organic chemical vapor deposition (MOCVD) of strained layer superlattices (SLSs) of InAsSb/InAs/InPSb/InAs as well as mid-infrared optically pumped lasers grown using a high speed rotating disk react,or (RDR). The devices contain AIAsSb cladding layers and strained, type I, InAsSb/InAs/InPSb/InAs strained layer superlattice (SLS) active regions. By changing the layer thickness and composition of the SLS, we have prepared structures with low temperature (<20K) photoluminescence wavelengths ranging from 3.4 to 4.8 pm. The optical properties of the InAsSb/InPSb superlattices revealed an anomalous low energy transition that can be assigned to an antimony-rich, interfacial layer in the superlattice. This low energy transition can be eliminated by introducing a 1.0 nm InAs layer between the InAsSb and InPSb layers in the superlattice. An InAsSb/InAs/lnPSbflnAs SLS laser was grown on an InAs substrate with AlAs{sub 0.16}Sb{sub 0.84} cladding layers. A lasing threshold and spectrally narrowed laser emission were seen from 80 through 250 K, the maximum temperature where lasing occurred. The temperature dependence of the SLS laser threshold is described by a characteristic temperature, T{sub 0} = 39 K, from 80 to 200 K.

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6 p.

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OSTI as DE00015202

Medium: P; Size: 6 pages

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  • 1999 Fall MRS Meeting, Boston, MA (US), 11/29/1999--12/03/1999

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  • Report No.: SAND99-1940C
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 15202
  • Archival Resource Key: ark:/67531/metadc623273

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  • December 8, 1999

Added to The UNT Digital Library

  • June 16, 2015, 7:43 a.m.

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  • April 11, 2017, 2:33 p.m.

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BIEFELD,ROBERT M.; PHILLIPS,J.D. & KURTZ,STEVEN R. The Growth of InAsSb/InAs/InPSb/InAs Mid-Infrared Emitters by Metal-Organic Chemical Vapor Deposition, article, December 8, 1999; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc623273/: accessed November 18, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.