Dry etching of III-V nitrides

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Description

The chemical inertness and high bond strengths of the III-V nitrides lead to slower plasma etching rates than for more conventional III-V semiconductors under the same conditions. High ion density conditions (>3{times}l0{sup 9}cm{sup {minus}3}) such as those obtained in ECR or magnetron reactors produce etch rates up to an order of magnitude higher than for RIE, where the ion densities are in the 10{sup 9}cm{sup {minus}3} range. We have developed smooth anisotropic dry etches for GaN, InN, AlN and their alloys based on Cl{sub 2}/CH{sub 4}/H{sub 2}/Ar, BCl{sub 3}/Ar, Cl{sub 2}/H{sub 2}, Cl{sub 2}/SF{sub 6}, HBr/H{sub 2} and HI/H{sub 2} ... continued below

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6 p.

Creation Information

Pearton, S.J.; Shul, R.J.; McLane, G.F. & Constantine, C. December 1, 1995.

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Authors

  • Pearton, S.J. Florida Univ., Gainesville, FL (United States)
  • Shul, R.J. Sandia National Labs., Albuquerque, NM (United States)
  • McLane, G.F. Army Research Laboratory, Ft. Monmouth, NJ (United States)
  • Constantine, C. Plasma Therm IP, St. Petersburg, FL (United States)

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

The chemical inertness and high bond strengths of the III-V nitrides lead to slower plasma etching rates than for more conventional III-V semiconductors under the same conditions. High ion density conditions (>3{times}l0{sup 9}cm{sup {minus}3}) such as those obtained in ECR or magnetron reactors produce etch rates up to an order of magnitude higher than for RIE, where the ion densities are in the 10{sup 9}cm{sup {minus}3} range. We have developed smooth anisotropic dry etches for GaN, InN, AlN and their alloys based on Cl{sub 2}/CH{sub 4}/H{sub 2}/Ar, BCl{sub 3}/Ar, Cl{sub 2}/H{sub 2}, Cl{sub 2}/SF{sub 6}, HBr/H{sub 2} and HI/H{sub 2} plasma chemistries achieving etch rates up to {approximately}4,000{angstrom}/min at moderate dc bias voltages ({le}-150V). Ion-induced damage in the nitrides appears to be less apparent than in other III-V`s. One of the key remaining issues is the achievement of high selectivities for removal of one layer from another.

Physical Description

6 p.

Notes

OSTI as DE96003101

Source

  • Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 27 Nov - 1 Dec 1995

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  • Other: DE96003101
  • Report No.: SAND--95-2699C
  • Report No.: CONF-951155--6
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 154941
  • Archival Resource Key: ark:/67531/metadc623063

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Creation Date

  • December 1, 1995

Added to The UNT Digital Library

  • June 16, 2015, 7:43 a.m.

Description Last Updated

  • April 13, 2016, 1:36 p.m.

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Pearton, S.J.; Shul, R.J.; McLane, G.F. & Constantine, C. Dry etching of III-V nitrides, article, December 1, 1995; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc623063/: accessed September 21, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.