Structural Changes in a-Si:H Films Deposited on the Edge of Crystallinity

PDF Version Also Available for Download.

Description

Using infrared, H evolution and x-ray diffraction (XRD), the structure of high H dilution, glow discharge deposited a-Si:H films ''on the edge of crystallinity'' is examined. From the Si-H wag mode peak frequency and the XRD results, we postulate the existence of very small Si crystallites contained within the amorphous matrix, with the vast majority of the bonded H located on these crystalline surfaces. Upon annealing at ramp rates of 8-15(degree)C/min, a H evolution both of which are far below those observed for a Si:H films grown without H dilution using similar ramp rates. While the crystallite volume fraction is ... continued below

Physical Description

vp.

Creation Information

Mahan, A. H.; Yang, J.; Guha, S. & Williamson, D. L. May 24, 1999.

Context

This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this article can be viewed below.

Who

People and organizations associated with either the creation of this article or its content.

Authors

Sponsor

Publisher

Provided By

UNT Libraries Government Documents Department

Serving as both a federal and a state depository library, the UNT Libraries Government Documents Department maintains millions of items in a variety of formats. The department is a member of the FDLP Content Partnerships Program and an Affiliated Archive of the National Archives.

Contact Us

What

Descriptive information to help identify this article. Follow the links below to find similar items on the Digital Library.

Description

Using infrared, H evolution and x-ray diffraction (XRD), the structure of high H dilution, glow discharge deposited a-Si:H films ''on the edge of crystallinity'' is examined. From the Si-H wag mode peak frequency and the XRD results, we postulate the existence of very small Si crystallites contained within the amorphous matrix, with the vast majority of the bonded H located on these crystalline surfaces. Upon annealing at ramp rates of 8-15(degree)C/min, a H evolution both of which are far below those observed for a Si:H films grown without H dilution using similar ramp rates. While the crystallite volume fraction is too small to be detected by XRD in the as-grown films, these crystallites catalyze the crystallization of the remainder of the amorphous matrix upon moderate annealing, thus explaining the existence of the low temperature H evolution peak.

Physical Description

vp.

Notes

OSTI as DE00012223

Source

  • Materials Research Society Spring Conference, San Francisco, CA (US), 04/06/1999--04/10/1999; Other Information: Supercedes report DE00012223; PBD: 24 May 1999

Language

Item Type

Identifier

Unique identifying numbers for this article in the Digital Library or other systems.

  • Report No.: NREL/CP-520-26374
  • Grant Number: AC36-99GO10337
  • Office of Scientific & Technical Information Report Number: 12223
  • Archival Resource Key: ark:/67531/metadc622809

Collections

This article is part of the following collection of related materials.

Office of Scientific & Technical Information Technical Reports

What responsibilities do I have when using this article?

When

Dates and time periods associated with this article.

Creation Date

  • May 24, 1999

Added to The UNT Digital Library

  • June 16, 2015, 7:43 a.m.

Description Last Updated

  • March 31, 2016, 7:14 p.m.

Usage Statistics

When was this article last used?

Yesterday: 0
Past 30 days: 0
Total Uses: 1

Interact With This Article

Here are some suggestions for what to do next.

Start Reading

PDF Version Also Available for Download.

Citations, Rights, Re-Use

Mahan, A. H.; Yang, J.; Guha, S. & Williamson, D. L. Structural Changes in a-Si:H Films Deposited on the Edge of Crystallinity, article, May 24, 1999; Golden, Colorado. (digital.library.unt.edu/ark:/67531/metadc622809/: accessed August 21, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.