Spatially Resolved Atomic and Molecular Spectroscopy in Microelectronics Processing Plasmas

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Description

Plasma processing of microelectronic materials is strongly dependent on the generation and control of neutral radial and ion species generated in a plasma. For example, process uniformity across a #er is drken by a combination of plasma charged particle and neutral uniformity. Due to extensive rexarch and engineering the current generation of commercial plasma reactors can generate very radially uniform ion distributions, usually better than ~ 2 perwnt as determined by ion saturation measurements. Due in part to the difficulty associated with determining the neutral radial distributions, control of the neutral radical uniformity is less well developed. This abstract will ... continued below

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Hebner, G.A. October 14, 1998.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Laboratories, Albuquerque, NM, and Livermore, CA
    Place of Publication: Albuquerque, New Mexico

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Description

Plasma processing of microelectronic materials is strongly dependent on the generation and control of neutral radial and ion species generated in a plasma. For example, process uniformity across a #er is drken by a combination of plasma charged particle and neutral uniformity. Due to extensive rexarch and engineering the current generation of commercial plasma reactors can generate very radially uniform ion distributions, usually better than ~ 2 perwnt as determined by ion saturation measurements. Due in part to the difficulty associated with determining the neutral radial distributions, control of the neutral radical uniformity is less well developed. This abstract will review our recent measurements of the spatial distribution of severaI important atomic and molecukw species in inductively coupled plasmas through C12 / BCIJ / Ar containing gas mixtures. Measured species include the ground state Cl and BC1 densities as well as the metastable argon density. The fbeus of this review will be on the experimental techniques and results. In addition to assisting in the development of a fbndarnental understanding of the important pkunna physics, these measurements have been used to benchmark multi dimensional plasma discharge codes.

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  • 20th Dry Process Symposium; Tokyo, Japan; 11/11-13/1998

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  • Other: DE00001553
  • Report No.: SAND98-2396C
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 1553
  • Archival Resource Key: ark:/67531/metadc622796

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  • October 14, 1998

Added to The UNT Digital Library

  • June 16, 2015, 7:43 a.m.

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  • Dec. 7, 2016, 9:33 p.m.

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Hebner, G.A. Spatially Resolved Atomic and Molecular Spectroscopy in Microelectronics Processing Plasmas, article, October 14, 1998; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc622796/: accessed October 20, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.