Processing, Microstructure and Electric Properties of Buried Resistors in Low Temperature Co-Fired Ceramics

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The electrical properties were investigated for ruthenium oxide based devitrifiable resistors embedded within low temperature co-fired ceramics. Special attention was given to the processing conditions and their affects on resistance and temperature coefficient of resistance (TCR). Results indicate that the conductance for these buried resistors is limited by tunneling of charge carriers through the thin glass layer between ruthenium oxide particles. A modified version of the tunneling barrier model is proposed to more accurately account for the microstructure ripening observed during thermal processing. The model parameters determined from curve fitting show that charging energy (i.e., the energy required for a ... continued below

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page(s) 27

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Dimos, D. B.; Kotula, P. G.; Miera, B. K.; Rodriguez, M. A. & Yang, Pin September 17, 1999.

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This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 16 times . More information about this article can be viewed below.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

The electrical properties were investigated for ruthenium oxide based devitrifiable resistors embedded within low temperature co-fired ceramics. Special attention was given to the processing conditions and their affects on resistance and temperature coefficient of resistance (TCR). Results indicate that the conductance for these buried resistors is limited by tunneling of charge carriers through the thin glass layer between ruthenium oxide particles. A modified version of the tunneling barrier model is proposed to more accurately account for the microstructure ripening observed during thermal processing. The model parameters determined from curve fitting show that charging energy (i.e., the energy required for a charge carrier to tunnel through the glass barrier) is strongly dependent on particle size and particle-particle separation between ruthenium oxide grains. Initial coarsening of ruthenium oxide grains was found to reduce the charging energy and lower the resistance. However, when extended ripening occurs, the increase in particle-particle separation increases the charging energy, reduces the tunneling probability and gives rise to a higher resistance. The trade-off between these two effects results an optimum microstructure with a minimum resistance and TCR. Furthermore, the TCR of these resistors has been shown to be governed by the magnitude of the charging energy. Model parameters determined by our analysis appear to provide quantitative physical interpretations to the microstructural change in the resistor, which in turn, are controlled by the processing conditions.

Physical Description

page(s) 27

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OSTI as DE00012679

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  • Journal Name: Journal of Applied Physics

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  • Report No.: SAND99-2412J
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 12679
  • Archival Resource Key: ark:/67531/metadc622794

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  • September 17, 1999

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  • June 16, 2015, 7:43 a.m.

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  • April 11, 2016, 8:15 p.m.

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Dimos, D. B.; Kotula, P. G.; Miera, B. K.; Rodriguez, M. A. & Yang, Pin. Processing, Microstructure and Electric Properties of Buried Resistors in Low Temperature Co-Fired Ceramics, article, September 17, 1999; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc622794/: accessed September 22, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.