Diode-pumped Yb:Sr{sub 5}(PO{sub 4}){sub 3}F laser performance Metadata

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Title

  • Main Title Diode-pumped Yb:Sr{sub 5}(PO{sub 4}){sub 3}F laser performance

Creator

  • Author: Marshall, C.D.
    Creator Type: Personal
  • Author: Payne, S.A.
    Creator Type: Personal
  • Author: Smith, L.K.
    Creator Type: Personal

Contributor

  • Sponsor: United States. Department of Energy.
    Contributor Type: Organization
    Contributor Info: USDOE, Washington, DC (United States)

Publisher

  • Name: Lawrence Livermore National Laboratory
    Place of Publication: California
    Additional Info: Lawrence Livermore National Lab., CA (United States)

Date

  • Creation: 1995-03-17

Language

  • English

Description

  • Content Description: The performance of the first diode-pumped Yb{sup 3+}-doped Sr{sub 5}(PO{sub 4}){sub 3}F (Yb:S-FAP) laser is discussed. We found the pumping dynamics and extraction cross-sections of Yb:S-FAP crystals to be similar to those previously inferred by purely spectroscopic techniques. The saturation fluence for pumping was measured to be 2.2 J/cm{sup 2} using three different methods based on either the spatial, temporal, or energy transmission properties of a Yb:S-FAP rod. The small signal gain implies an emission cross section of 6.0 x 10{sup -20} cm{sup 2} that falls within error bars of the previously reported value of 7.3 x 10{sup -20} cm{sup 2}, obtained from spectroscopic techniques. Up to 1.7 J/cm{sup 3} of stored energy density was achieved in a 6 x 6 x 44 mm Yb:S-FAP amplifier rod. An InGaAs diode array has been fabricated that has suitable specifications for pumping a 3 x 3 x 30 mm Yb:S-FAP rod. In a free running configuration diode-pumped slope efficiencies up to 43% were observed with output energies up to {approximately}0.5 J per 1 ms pulse. When the rod was mounted in a copper block for cooling, 13 W of average power was produced with power supply limited operation at 70 Hz and 500 {mu}s pulses.
  • Physical Description: 5 p.

Subject

  • Keyword: Indium Arsenides
  • Keyword: Semiconductor Diodes
  • Keyword: Ytterbium
  • STI Subject Categories: 36 Materials Science
  • STI Subject Categories: 42 Engineering Not Included In Other Categories
  • Keyword: Efficiency
  • Keyword: Pulses
  • Keyword: Phosphates
  • Keyword: Lasers
  • Keyword: Strontium Fluorides
  • Keyword: Performance
  • Keyword: Gallium Arsenides

Source

  • Conference: Advanced solid-state laser conference, Memphis, TN (United States), 29 Jan - 1 Feb 1995

Collection

  • Name: Office of Scientific & Technical Information Technical Reports
    Code: OSTI

Institution

  • Name: UNT Libraries Government Documents Department
    Code: UNTGD

Resource Type

  • Article

Format

  • Text

Identifier

  • Other: DE96000096
  • Report No.: UCRL-JC--118194
  • Report No.: CONF-950101--9
  • Grant Number: W-7405-ENG-48
  • Office of Scientific & Technical Information Report Number: 110729
  • Archival Resource Key: ark:/67531/metadc622706

Note

  • Display Note: INIS; OSTI as DE96000096