Growth and properties of W-B-N diffusion barriers deposited by chemical vapor deposition

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The authors have used chemical vapor deposition to grow ternary tungsten-based diffusion barriers to determine if they exhibit properties similar to those of sputter-deposited ternaries. A range of different W-B-N compositions in a band of compositions roughly between 20 and 40% W were produced. The deposition temperature was low, 350 C, and the precursors used are well accepted by the industry. Deposition rates are high for a diffusion barrier application. Resistivities range from 200 to 20,000 {micro}{Omega}-cm, the films with the best barrier properties having {approximately}1,000 {micro}{Omega}-cm resistivities. Adhesion to oxides is sufficient to allow these films to be used ... continued below

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4 p.

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Fleming, J.G.; Roherty-Osmun, E.; Custer, J.; Smith, P.M.; Reid, J.S. & Nicolet, M.A. October 1, 1995.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

The authors have used chemical vapor deposition to grow ternary tungsten-based diffusion barriers to determine if they exhibit properties similar to those of sputter-deposited ternaries. A range of different W-B-N compositions in a band of compositions roughly between 20 and 40% W were produced. The deposition temperature was low, 350 C, and the precursors used are well accepted by the industry. Deposition rates are high for a diffusion barrier application. Resistivities range from 200 to 20,000 {micro}{Omega}-cm, the films with the best barrier properties having {approximately}1,000 {micro}{Omega}-cm resistivities. Adhesion to oxides is sufficient to allow these films to be used as the adhesion layer in a tungsten chemical mechanical polishing plug application. The films are x-ray amorphous as-deposited and have crystallization temperatures of up to 900 C. Barrier performance against Cu has been tested using diode test structures. A composition of W{sub .23}B{sub .49}N{sub .28} was able to prevent diode failure up to a 700 C, 30 minute anneal. These materials, deposited by CVD, display properties similar to those deposited by physical deposition techniques.

Physical Description

4 p.

Notes

OSTI as DE96001726

Source

  • Advanced metalization and interconnect systems for ultra large scale integration applications, Portland, OR (United States), 3-5 Oct 1995

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  • Other: DE96001726
  • Report No.: SAND--95-2250C
  • Report No.: CONF-9510161--1
  • Grant Number: AC04-94AL85000
  • DOI: 10.2172/119979 | External Link
  • Office of Scientific & Technical Information Report Number: 119979
  • Archival Resource Key: ark:/67531/metadc622666

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  • October 1, 1995

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  • June 16, 2015, 7:43 a.m.

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  • April 14, 2016, 7:46 p.m.

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Fleming, J.G.; Roherty-Osmun, E.; Custer, J.; Smith, P.M.; Reid, J.S. & Nicolet, M.A. Growth and properties of W-B-N diffusion barriers deposited by chemical vapor deposition, report, October 1, 1995; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc622666/: accessed September 22, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.