The effect of hydrogen-plasma and PECVD-nitride deposition on bulk and surface passivation in string-ribbon silicon solar cells

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We have investigated whether an in-situ hydrogen or ammonia rf-plasma treatment prior to a PECVD-nitride deposition would promote bulk defect passivation independently of surface effects. We also studied whether the predeposition of a thin silicon-nitride protective layer vbefore performing the plasma treatment would serve to minimize surface damage. We found that for the limited set of deposition conditions in of cells processed using the used five different deposition strategies and compared the resulting cell performance with that investigated so far, the direct deposition of PECVD-nitride produces the best cells on String Ribbon silicon wafers to date, with efficiencies up to ... continued below

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4 p.

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Ruby, D.S.; Wilbanks, W.L.; Fleddermann, C.B. & Hanoka, J.I. December 1, 1995.

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This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 43 times , with 12 in the last month . More information about this article can be viewed below.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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We have investigated whether an in-situ hydrogen or ammonia rf-plasma treatment prior to a PECVD-nitride deposition would promote bulk defect passivation independently of surface effects. We also studied whether the predeposition of a thin silicon-nitride protective layer vbefore performing the plasma treatment would serve to minimize surface damage. We found that for the limited set of deposition conditions in of cells processed using the used five different deposition strategies and compared the resulting cell performance with that investigated so far, the direct deposition of PECVD-nitride produces the best cells on String Ribbon silicon wafers to date, with efficiencies up to 14.5%. Hydrogen and ammonia plasma pretreatments without a protective nitride layer resulted in better bulk passivation, but damaged surfaces. Pretreatments after deposition of the protective layer produced the best surface passivation, but were not effective in passivating the bulk.

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4 p.

Notes

OSTI as DE96002736

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  • 13. European photovoltaic solar energy conference and exhibition, Nice (France), 23-27 Oct 1995

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  • Other: DE96002736
  • Report No.: SAND--95-2481C
  • Report No.: CONF-951040--1
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 148674
  • Archival Resource Key: ark:/67531/metadc622483

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  • December 1, 1995

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  • June 16, 2015, 7:43 a.m.

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  • April 14, 2016, 3:37 p.m.

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Ruby, D.S.; Wilbanks, W.L.; Fleddermann, C.B. & Hanoka, J.I. The effect of hydrogen-plasma and PECVD-nitride deposition on bulk and surface passivation in string-ribbon silicon solar cells, article, December 1, 1995; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc622483/: accessed September 20, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.