Effect of Temperature on GaGdO/GaN Metal Oxide Semiconductor Field Effect Transistors

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GaGdO was deposited on GaN for use as a gate dielectric in order to fabricate a depletion metal oxide semiconductor field effect transistor (MOSFET). This is the fmt demonstration of such a device in the III-Nitride system. Analysis of the effect of temperature on the device shows that gate leakage is significantly reduced at elevated temperature relative to a conventional metal semiconductor field effeet transistor (MESFET) fabricated on the same GaN layer. MOSFET device operation in fact improved upon heating to 400 C. Modeling of the effeet of temperature on contact resistance suggests that the improvement is due to a ... continued below

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Abernathy, C.R.; Baca, A.; Chu, S.N.G.; Hong, M.; Lothian, J.R.; Marcus, M.A. et al. October 14, 1998.

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This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 28 times , with 5 in the last month . More information about this article can be viewed below.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Laboratories, Albuquerque, NM, and Livermore, CA
    Place of Publication: Albuquerque, New Mexico

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Description

GaGdO was deposited on GaN for use as a gate dielectric in order to fabricate a depletion metal oxide semiconductor field effect transistor (MOSFET). This is the fmt demonstration of such a device in the III-Nitride system. Analysis of the effect of temperature on the device shows that gate leakage is significantly reduced at elevated temperature relative to a conventional metal semiconductor field effeet transistor (MESFET) fabricated on the same GaN layer. MOSFET device operation in fact improved upon heating to 400 C. Modeling of the effeet of temperature on contact resistance suggests that the improvement is due to a reduction in the parasitic resistances present in the device.

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  • Journal Name: Applied Physics Letters

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  • Other: DE00001085
  • Report No.: SAND98-2308J
  • Grant Number: NONE
  • Office of Scientific & Technical Information Report Number: 1085
  • Archival Resource Key: ark:/67531/metadc622380

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • October 14, 1998

Added to The UNT Digital Library

  • June 16, 2015, 7:43 a.m.

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  • Dec. 7, 2016, 11:03 a.m.

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Abernathy, C.R.; Baca, A.; Chu, S.N.G.; Hong, M.; Lothian, J.R.; Marcus, M.A. et al. Effect of Temperature on GaGdO/GaN Metal Oxide Semiconductor Field Effect Transistors, article, October 14, 1998; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc622380/: accessed October 20, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.