New Insights into Fully-Depleted SOI Transistor Response During Total-Dose Irradiation

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Previous work showed the possible existence of a total-dose latch effect in fully-depleted SOI transistors that could severely limit the radiation hardness of SOI devices. Other work showed that worst-case bias configuration during irradiation was the transmission gate bias configuration. In this work we further explore the effects of total-dose ionizing irradiation on fully-depleted SOI transistors. Closed-geometry and standard transistors fabricated in two fully-depleted processes were irradiated with 10-keV x rays. Our results show no evidence for a total-dose latch effect as proposed by others. Instead, in absence of parasitic trench sidewall leakage, our data suggests that the increase in ... continued below

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9 p.

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BURNS,J.A.; DODD,PAUL E.; KEAST,C.L.; SCHWANK,JAMES R.; SHANEYFELT,MARTY R. & WYATT,P.W. September 14, 1999.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

Previous work showed the possible existence of a total-dose latch effect in fully-depleted SOI transistors that could severely limit the radiation hardness of SOI devices. Other work showed that worst-case bias configuration during irradiation was the transmission gate bias configuration. In this work we further explore the effects of total-dose ionizing irradiation on fully-depleted SOI transistors. Closed-geometry and standard transistors fabricated in two fully-depleted processes were irradiated with 10-keV x rays. Our results show no evidence for a total-dose latch effect as proposed by others. Instead, in absence of parasitic trench sidewall leakage, our data suggests that the increase in radiation-induced leakage current is caused by positive charge trapping in the buried oxide inverting the back-channel interface. At moderate levels of trapped charge, the back-channel interface is slightly inverted causing a small leakage current to flow. This leakage current is amplified to considerably higher levels by impact ionization. Because the back-channel interface is in weak inversion, the top-gate bias can modulate the back-channel interface and turn the leakage current off at large, negative voltage levels. At high levels of trapped charge, the back-channel interface is fully inverted and the gate bias has little effect on leakage current. However, it is likely that this current also is amplified by impact ionization. For these transistors, the worst-case bias configuration was determined to be the ''ON'' bias configuration. These results have important implication on hardness assurance.

Physical Description

9 p.

Notes

INIS; OSTI as DE00014030

Medium: P; Size: 9 pages

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  • 5th European Conference, RADECS99, Abbaye be Fontevraud (FR), 08/13/1999--08/17/1999

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  • Report No.: SAND99-2427C
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 14030
  • Archival Resource Key: ark:/67531/metadc622337

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Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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Creation Date

  • September 14, 1999

Added to The UNT Digital Library

  • June 16, 2015, 7:43 a.m.

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  • April 11, 2017, 8:28 p.m.

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BURNS,J.A.; DODD,PAUL E.; KEAST,C.L.; SCHWANK,JAMES R.; SHANEYFELT,MARTY R. & WYATT,P.W. New Insights into Fully-Depleted SOI Transistor Response During Total-Dose Irradiation, article, September 14, 1999; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc622337/: accessed October 20, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.