Atomic-Scale Engineering of the SiC-SiO{sub 2} Interface

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We report results from three distinct but related thrusts that aim to elucidate the atomic-scale structure and properties of the Sic-SiO{sub 2} interface. (a) First-principles theoretical calculations probe the global bonding arrangements and the local processes during oxidation; (b) Z-contrast atomic-resolution transmission electron microscopy and electron-energy-loss spectroscopy provide images and interface spectra, and (c) nuclear techniques and electrical measurements are used to profile N at the interface and determine interface trap densities.

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Buczko, R.; Chung, G.; Di Ventra, M.; Duscher, G.; Feldman, L.C.; Huang, M.B. et al. November 14, 1999.

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Description

We report results from three distinct but related thrusts that aim to elucidate the atomic-scale structure and properties of the Sic-SiO{sub 2} interface. (a) First-principles theoretical calculations probe the global bonding arrangements and the local processes during oxidation; (b) Z-contrast atomic-resolution transmission electron microscopy and electron-energy-loss spectroscopy provide images and interface spectra, and (c) nuclear techniques and electrical measurements are used to profile N at the interface and determine interface trap densities.

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OSTI as DE00014620

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  • Report No.: ORNL/CP-105048
  • Grant Number: AC05-96OR22464
  • Office of Scientific & Technical Information Report Number: 14620
  • Archival Resource Key: ark:/67531/metadc622305

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  • November 14, 1999

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  • June 16, 2015, 7:43 a.m.

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  • Jan. 21, 2016, 3:30 p.m.

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Buczko, R.; Chung, G.; Di Ventra, M.; Duscher, G.; Feldman, L.C.; Huang, M.B. et al. Atomic-Scale Engineering of the SiC-SiO{sub 2} Interface, article, November 14, 1999; Tennessee. (digital.library.unt.edu/ark:/67531/metadc622305/: accessed August 19, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.