Self-Aligned GaAs JFETs for Low-Power Microwave Amplifiers and RFICs at 2.4 GHz

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Description

Self-aligned GaAs JFET narrowband amplifiers operating at 2.4 GHz were designed and fabricated with both discrete WETS as a hybrid amplifier and as RFICS. Enhancement-mode JFETs were used in order to be compatible with complementary digital logic. Hybrid amplifiers achieved 8-10 dB of gain at 2.4 GHz and 1 mW DC bias level. The RFIC achieved 10 dB of gain at 24 GHz and 2 mW DC bias level.

Creation Information

Baca, A.G.; Dubbert, D.F.; Greenway, D.; Hietala, V.M.; Shul, R.J.; Sloan, L.R. et al. November 2, 1998.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Laboratories, Albuquerque, NM, and Livermore, CA
    Place of Publication: Albuquerque, New Mexico

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Description

Self-aligned GaAs JFET narrowband amplifiers operating at 2.4 GHz were designed and fabricated with both discrete WETS as a hybrid amplifier and as RFICS. Enhancement-mode JFETs were used in order to be compatible with complementary digital logic. Hybrid amplifiers achieved 8-10 dB of gain at 2.4 GHz and 1 mW DC bias level. The RFIC achieved 10 dB of gain at 24 GHz and 2 mW DC bias level.

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  • Journal Name: Electronic Letters

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  • Other: DE00001523
  • Report No.: SAND98-2449J
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 1523
  • Archival Resource Key: ark:/67531/metadc622278

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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Creation Date

  • November 2, 1998

Added to The UNT Digital Library

  • June 16, 2015, 7:43 a.m.

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  • Dec. 9, 2016, 10:08 p.m.

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Baca, A.G.; Dubbert, D.F.; Greenway, D.; Hietala, V.M.; Shul, R.J.; Sloan, L.R. et al. Self-Aligned GaAs JFETs for Low-Power Microwave Amplifiers and RFICs at 2.4 GHz, article, November 2, 1998; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc622278/: accessed October 17, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.