This report summarizes work on the development of ultra-high-speed semiconductor optical and electronic devices. High-speed operation is achieved by velocity matching the input stimulus to the output signal along the device`s length. Electronic devices such as field-effect transistors (FET`s), should experience significant speed increases by velocity matching the electrical input and output signals along the device. Likewise, optical devices, which are typically large, can obtain significant bandwidths by velocity matching the light being generated, detected or modulated with the electrical signal on the device`s electrodes. The devices discussed in this report utilize truly distributed electrical design based on slow-wave propagation ...
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Sandia National Labs., Albuquerque, NM (United States)
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Albuquerque, New Mexico
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This report summarizes work on the development of ultra-high-speed semiconductor optical and electronic devices. High-speed operation is achieved by velocity matching the input stimulus to the output signal along the device`s length. Electronic devices such as field-effect transistors (FET`s), should experience significant speed increases by velocity matching the electrical input and output signals along the device. Likewise, optical devices, which are typically large, can obtain significant bandwidths by velocity matching the light being generated, detected or modulated with the electrical signal on the device`s electrodes. The devices discussed in this report utilize truly distributed electrical design based on slow-wave propagation to achieve velocity matching.
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Hietala, V.M.; Plut, T.A.; Kravitz, S.H.; Vawter, G.A.; Wendt, J.R. & Armendariz, M.G.Ultra-high-speed optical and electronic distributed devices,
report,
August 1, 1995;
Albuquerque, New Mexico.
(digital.library.unt.edu/ark:/67531/metadc621984/:
accessed April 24, 2018),
University of North Texas Libraries, Digital Library, digital.library.unt.edu;
crediting UNT Libraries Government Documents Department.