Bias-voltage-controlled interlayer exchange coupling.

PDF Version Also Available for Download.

Description

We propose a new system whose magnetization direction can be controlled by an applied bias voltage without an external magnetic field. The system consists of a four layered structure F{sub 1}/S/I/F{sub 2} (F{sub 1}, F{sub 2}: ferromagnets, S: spacer, I: insulator). An analytic expression for bias-voltage-controlled interlayer exchange coupling in this system is developed within a simple free-electron-like, one-dimensional approximation. According to the approach, the magnetic configurations of the two magnetic layers oscillate from antiferromagnetic to ferromagnetic with applied bias voltage. This implies that we can switch/rotate the magnetization direction without an external magnetic field. Possible applications of such a ... continued below

Physical Description

5 p.

Creation Information

You, C.-Y. March 29, 1999.

Context

This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 29 times , with 5 in the last month . More information about this article can be viewed below.

Who

People and organizations associated with either the creation of this article or its content.

Author

Sponsor

Publisher

Provided By

UNT Libraries Government Documents Department

Serving as both a federal and a state depository library, the UNT Libraries Government Documents Department maintains millions of items in a variety of formats. The department is a member of the FDLP Content Partnerships Program and an Affiliated Archive of the National Archives.

Contact Us

What

Descriptive information to help identify this article. Follow the links below to find similar items on the Digital Library.

Description

We propose a new system whose magnetization direction can be controlled by an applied bias voltage without an external magnetic field. The system consists of a four layered structure F{sub 1}/S/I/F{sub 2} (F{sub 1}, F{sub 2}: ferromagnets, S: spacer, I: insulator). An analytic expression for bias-voltage-controlled interlayer exchange coupling in this system is developed within a simple free-electron-like, one-dimensional approximation. According to the approach, the magnetic configurations of the two magnetic layers oscillate from antiferromagnetic to ferromagnetic with applied bias voltage. This implies that we can switch/rotate the magnetization direction without an external magnetic field. Possible applications of such a system are also discussed.

Physical Description

5 p.

Notes

OSTI as DE00011193

Medium: P; Size: 5 pages

Source

  • International Magnetics Conference, INTERMAG 99, Kyongju (KR), 05/18/1999--05/21/1999

Language

Item Type

Identifier

Unique identifying numbers for this article in the Digital Library or other systems.

  • Report No.: ANL/MSD/CP-98065
  • Grant Number: W-31109-ENG-38
  • Office of Scientific & Technical Information Report Number: 11193
  • Archival Resource Key: ark:/67531/metadc621859

Collections

This article is part of the following collection of related materials.

Office of Scientific & Technical Information Technical Reports

What responsibilities do I have when using this article?

When

Dates and time periods associated with this article.

Creation Date

  • March 29, 1999

Added to The UNT Digital Library

  • June 16, 2015, 7:43 a.m.

Description Last Updated

  • April 11, 2017, 12:15 p.m.

Usage Statistics

When was this article last used?

Yesterday: 1
Past 30 days: 5
Total Uses: 29

Interact With This Article

Here are some suggestions for what to do next.

Start Reading

PDF Version Also Available for Download.

Citations, Rights, Re-Use

You, C.-Y. Bias-voltage-controlled interlayer exchange coupling., article, March 29, 1999; Illinois. (digital.library.unt.edu/ark:/67531/metadc621859/: accessed September 19, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.