P-type silicon drift detectors: First results

PDF Version Also Available for Download.

Description

We have fabricated a 4 cm {times} 4 cm, position-sensitive silicon drift detector using high purity, p-type silicon as the substrate. In this paper, we describe the double-sided planar process used to fabricate the detectors and the strategy used to suppress surface carrier inversion due to the presence of fixed positive charge at the Si/SiO{sub 2} interface. The key issue in optimizing the fabrication process has been to minimize leakage currents and prevent breakdown at low voltages. Tests show that a drift signal can be measured across the entire length of the detector and that the transit time of the ... continued below

Physical Description

5 p.

Creation Information

Wang, N.W.; Krieger, B. & Krofcheck, D. June 1, 1995.

Context

This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this article can be viewed below.

Who

People and organizations associated with either the creation of this article or its content.

Sponsor

Publisher

Provided By

UNT Libraries Government Documents Department

Serving as both a federal and a state depository library, the UNT Libraries Government Documents Department maintains millions of items in a variety of formats. The department is a member of the FDLP Content Partnerships Program and an Affiliated Archive of the National Archives.

Contact Us

What

Descriptive information to help identify this article. Follow the links below to find similar items on the Digital Library.

Description

We have fabricated a 4 cm {times} 4 cm, position-sensitive silicon drift detector using high purity, p-type silicon as the substrate. In this paper, we describe the double-sided planar process used to fabricate the detectors and the strategy used to suppress surface carrier inversion due to the presence of fixed positive charge at the Si/SiO{sub 2} interface. The key issue in optimizing the fabrication process has been to minimize leakage currents and prevent breakdown at low voltages. Tests show that a drift signal can be measured across the entire length of the detector and that the transit time of the holes varies linearly with the position of the induced charge signal.

Physical Description

5 p.

Notes

INIS; OSTI as DE96001117

Source

  • Institute of Electrical and Electronic Engineers (IEEE) nuclear science symposium and medical imaging conference, Norfolk, VA (United States), 30 Oct - 5 Nov 1994

Language

Item Type

Identifier

Unique identifying numbers for this article in the Digital Library or other systems.

  • Other: DE96001117
  • Report No.: LBL--37310
  • Report No.: CONF-941061--22
  • Grant Number: AC03-76SF00098
  • Office of Scientific & Technical Information Report Number: 110759
  • Archival Resource Key: ark:/67531/metadc621728

Collections

This article is part of the following collection of related materials.

Office of Scientific & Technical Information Technical Reports

What responsibilities do I have when using this article?

When

Dates and time periods associated with this article.

Creation Date

  • June 1, 1995

Added to The UNT Digital Library

  • June 16, 2015, 7:43 a.m.

Description Last Updated

  • April 5, 2016, 12:02 p.m.

Usage Statistics

When was this article last used?

Yesterday: 0
Past 30 days: 0
Total Uses: 2

Interact With This Article

Here are some suggestions for what to do next.

Start Reading

PDF Version Also Available for Download.

Citations, Rights, Re-Use

Wang, N.W.; Krieger, B. & Krofcheck, D. P-type silicon drift detectors: First results, article, June 1, 1995; California. (digital.library.unt.edu/ark:/67531/metadc621728/: accessed September 25, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.