Sulfuric acid/hydrogen peroxide rinsing study Page: 1 of 8
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SULFURIC ACID/HYDROGEN PEROXIDE RINSING STUDY*
P. J. Clews, G. C. Nelson, C. A. Matlock, P. J. Resnick, C. L. J. Adkins, N. C. Korbe
Sandia National Laboratories
Albuquerque, NM 87185 RECEIVED
ABSTRACT NOV 2 1 1995
0 Sr 17
Sulfuric acid hydrogen peroxide mixtures (SPM) are commonly used in the
semiconductor industry to remove organic contaminants from wafer surfaces. This
viscous solution is very difficult to rinse off wafer surfaces. Various rinsing conditions
were tested and the resulting residual acid left on the wafer surface was measured. -
Particle growth resulting from incomplete rinse is correlated with the amount of sulfur on
the wafer surface measured by Time of Flight Secondary Ion Mass Spectroscopy (TOF-
SIMS). The amount of sulfur on the wafer surface after the rinse step is strongly affected
by the wafer film type and contact angle prior to the SPM clean.
Sulfuric acid/hydrogen peroxide mixtures (SPM) are widely used in the
semiconductor industry for removing organic materials such as photoresist from wafer
surfaces. This viscous mixture is not readily rinsed off the wafer surface even when using
copious amounts of water. Conservation of water in semiconductor fabrication is
becoming an important issue, especially in areas that do not have abundant water supplies.
Reducing the amount of water required for wet processing can significantly reduce the
cost-of-ownership of wet processing equipment.
Residual SPM contamination results in the growth of particles on the wafer surface
after the wafers have been stored in a clean room environment for a period of time. These
particles are easily rinsed off the wafer surface with deionized (DI) water. The particles
will not regrow if they are given enough time to fully develop before they are rinsed off
the wafer with water. If the particles are only allowed to grow for a short time, they will
rinse off the wafer but new particles will regrow. It is not practical in a manufacturing
environment to sufficiently delay rinsing wafers so that particles will not regrow because
the delay increases cycle time. Wafers processed through ammonium hydroxide, hydrogen
peroxide, water (SC1) or dilute hydrofluoric acid (HF) processes after the SPM clean
*This work was performed at Sandia National Laboratories, which is operated for the U.S.
Department of Energy under contract no. DE-AC04-94AL85000. This work was funded through
a cooperative research and development agreement with SEMATECH.
. MAS wER
DjISUUON OF TIS DOCUMENT IS UNUMITED
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Clews, P.J.; Nelson, G.C. & Matlock, C.A. Sulfuric acid/hydrogen peroxide rinsing study, article, December 1, 1995; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc621692/m1/1/: accessed January 18, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.