Research on silicon-carbon alloys and interfaces. Final subcontract report, 15 February 1991--31 July 1994 Metadata

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Title

  • Main Title Research on silicon-carbon alloys and interfaces. Final subcontract report, 15 February 1991--31 July 1994

Creator

  • Author: Abelson, J. R.
    Creator Type: Personal
    Creator Info: Illinois Univ., Urbana, IL (United States)

Contributor

  • Sponsor: United States. Department of Energy.
    Contributor Type: Organization
    Contributor Info: USDOE, Washington, DC (United States)

Publisher

  • Name: National Renewable Energy Laboratory (U.S.)
    Place of Publication: Golden, Colorado
    Additional Info: National Renewable Energy Lab., Golden, CO (United States)
  • Name: Illinois Univ., Urbana, IL (United States)
    Place of Publication: United States

Date

  • Creation: 1995-07-01

Language

  • English

Description

  • Content Description: This report describes work performed to develop improved p-type wide-band-gap hydrogenated amorphous silicon-carbon alloy (a-Si{sub 1-x}C{sub x:}H) thin films and interfaces for the ``top junction`` in hydrogenated amorphous silicon (a-Si:H)-based p-i-n solar cells. We used direct current reactive magnetron sputtering to deposit undoped a-Si{sub 1-x}C{sub x}H films with a Tauc band gap E{sub g} of 1.90 eV, a sub-band-gap absorption of 0.4 (at 1.2 eV), an Urbach energy of 55 MeV, an ambipolar diffusion length of 100 nm, an air-mass-one photoconductivity of 10{sup {minus}6}/{Omega}-cm, and a dark conductivity of 8{times} 1O{sup {minus}11}/{Omega}-cm. p{sup +}a-Si{sub 1-x}C{sub x}:H films with a Tauc band gap of 1.85 eV have a dark conductivity of 8 {times} 10{sup {minus}6}/{Omega}-cm and thermal activation energy of 0.28 eV. We used in-situ spectroscopic ellipsometry and post-growth X-ray photoelectron spectroscopy to determine the relative roles of H and Si in the chemical reduction of SnO{sub 2} in the early stages of film growth. We used in-situ spectroscopic ellipsometry to show that a-Si:H can be transformed into {mu}c-Si:H in a subsurface region under appropriate growth conditions. We also determined substrate cleaning and ion bombardment conditions which improve the adhesion of a-Si{sub 1-x}C{sub x}:H films.
  • Physical Description: 83 p.

Subject

  • STI Subject Categories: 14 Solar Energy
  • Keyword: Silicon Solar Cells
  • Keyword: Progress Report
  • Keyword: Silicon Alloys
  • Keyword: Materials
  • Keyword: Carbon Additions

Source

  • Other Information: PBD: Jul 1995

Collection

  • Name: Office of Scientific & Technical Information Technical Reports
    Code: OSTI

Institution

  • Name: UNT Libraries Government Documents Department
    Code: UNTGD

Resource Type

  • Report

Format

  • Text

Identifier

  • Other: DE95009243
  • Report No.: NREL/TP--411-8111
  • Grant Number: AC36-83CH10093
  • DOI: 10.2172/102293
  • Office of Scientific & Technical Information Report Number: 102293
  • Archival Resource Key: ark:/67531/metadc621586

Note

  • Display Note: OSTI as DE95009243