Deep Levels in p- and n-type InGaAsN for High Efficiency Multi-Junction III-V Solar Cells

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Red Teaming is an advanced form of assessment that can be used to identify weaknesses in a variety of cyber systems. it is especially beneficial when the target system is still in development when designers can readily affect improvements. This paper discusses the red team analysis process and the author's experiences applying this process to five selected Information Technology Office (ITO) projects. Some detail of the overall methodology, summary results from the five projects, and lessons learned are contained within this paper.

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13 p.

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ALLERMAN,ANDREW A.; JONES,ERIC D.; KAPLAR,ROBERT J.; KURTZ,STEVEN R.; KWON,DAEWON & RINGEL,STEVEN A. November 11, 1999.

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This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 37 times . More information about this article can be viewed below.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

Red Teaming is an advanced form of assessment that can be used to identify weaknesses in a variety of cyber systems. it is especially beneficial when the target system is still in development when designers can readily affect improvements. This paper discusses the red team analysis process and the author's experiences applying this process to five selected Information Technology Office (ITO) projects. Some detail of the overall methodology, summary results from the five projects, and lessons learned are contained within this paper.

Physical Description

13 p.

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OSTI as DE00014839

Medium: P; Size: 13 pages

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  • 11TH International Photovoltaic Science and Engineering Conference (PVSEC-11), Sapporo Hokkaido (JP), 09/20/1999--09/24/1999

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  • Report No.: SAND99-2597C
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 14839
  • Archival Resource Key: ark:/67531/metadc621299

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  • November 11, 1999

Added to The UNT Digital Library

  • June 16, 2015, 7:43 a.m.

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  • April 7, 2017, 1:02 p.m.

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ALLERMAN,ANDREW A.; JONES,ERIC D.; KAPLAR,ROBERT J.; KURTZ,STEVEN R.; KWON,DAEWON & RINGEL,STEVEN A. Deep Levels in p- and n-type InGaAsN for High Efficiency Multi-Junction III-V Solar Cells, article, November 11, 1999; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc621299/: accessed December 15, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.