Mechanistic Feature-Scale Profile Simulation of SiO2LPCVD by TEOS Pyrolysis

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Description

Simulation of chemical vapor deposition (CVD) in submicron features typical of semiconductor devices has been facilitated by extending the EVOLVE thin film etch and deposition simulation code to use thermal reaction mechanisms expressed in the Chemkin format. This allows consistent coupling between EVOLVE and reactor simulation codes that use Chemkin. In an application of a reactor-scale simulation code providing surface fluxes to a feature-scale simulation code, a proposed reaction mechanism for TEOS pyrolysis to deposit SiO{sub 2}, which had been applied successfully to reactor-scale simulation, is seen not to predict the low step coverage over trenches observed under short reactor ... continued below

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36 p.

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CALE, TIMOTHY S.; LABUN, ANDREW H. & MOFFAT, HARRY K. September 13, 1999.

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This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 14 times . More information about this article can be viewed below.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

Simulation of chemical vapor deposition (CVD) in submicron features typical of semiconductor devices has been facilitated by extending the EVOLVE thin film etch and deposition simulation code to use thermal reaction mechanisms expressed in the Chemkin format. This allows consistent coupling between EVOLVE and reactor simulation codes that use Chemkin. In an application of a reactor-scale simulation code providing surface fluxes to a feature-scale simulation code, a proposed reaction mechanism for TEOS pyrolysis to deposit SiO{sub 2}, which had been applied successfully to reactor-scale simulation, is seen not to predict the low step coverage over trenches observed under short reactor residence time conditions. An apparent discrepancy between the mechanism and profile-evolution observations is a reduced degree of sensitivity of the deposition rate to the presence of reaction products, i.e., the byproduct inhibition effect is underpredicted. The cause of the proposed mechanism's insensitivity to byproduct inhibition is investigated with the combined reactor and topography simulators first by manipulating the surface to volume ratio of a simulated reactor and second by calibrating parameters in the proposed mechanism such as the calculated free energies of surface molecules. The conclusion is that the byproduct inhibition can not be enhanced to fit profile evolution data without comprising agreement with reactor scale data by simply adjusting mechanism parameters. Thus, additional surface reaction channels seem to be required to reproduce simultaneously experimental reactor-scale growth rates and experimental step coverages.

Physical Description

36 p.

Notes

OSTI as DE00012674

Medium: P; Size: 36 pages

Source

  • Journal Name: Journal Vacuum Society Technology; Other Information: Submitted to Journal Vacuum Society Technology

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  • Report No.: SAND99-2407J
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 12674
  • Archival Resource Key: ark:/67531/metadc621224

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Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • September 13, 1999

Added to The UNT Digital Library

  • June 16, 2015, 7:43 a.m.

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  • April 12, 2017, 2:11 p.m.

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CALE, TIMOTHY S.; LABUN, ANDREW H. & MOFFAT, HARRY K. Mechanistic Feature-Scale Profile Simulation of SiO2LPCVD by TEOS Pyrolysis, article, September 13, 1999; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc621224/: accessed April 22, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.