Damage to III-V Devices During Electron Cyclotron Resonance Chemical Vapor Deposition

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GaAs-based metal semiconductor field effect transistors (MESFETS), heterojunction bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) have been exposed to ECR SiJ&/NH3 discharges for deposition of SiNX passivating layers. The effect of source power, rf chuck power, pressure and plasma composition have been investigated. Effects due to both ion damage and hydrogenation of dopants are observed. For both HEMTs and MESFETS there are no conditions where substantial increases in channel sheet resistivity are not observed, due primarily to (Si-H)O complex formation. In HBTs the carbon-doped base layer is the most susceptible layer to hydrogenation. Ion damage in all three ... continued below

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Abernathy, C.R.; Hahn, Y.B.; Hays, D.C.; Johnson, D.; Lee, J.W.; MacKenzie, K. et al. October 14, 1998.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Laboratories, Albuquerque, NM, and Livermore, CA
    Place of Publication: Albuquerque, New Mexico

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GaAs-based metal semiconductor field effect transistors (MESFETS), heterojunction bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) have been exposed to ECR SiJ&/NH3 discharges for deposition of SiNX passivating layers. The effect of source power, rf chuck power, pressure and plasma composition have been investigated. Effects due to both ion damage and hydrogenation of dopants are observed. For both HEMTs and MESFETS there are no conditions where substantial increases in channel sheet resistivity are not observed, due primarily to (Si-H)O complex formation. In HBTs the carbon-doped base layer is the most susceptible layer to hydrogenation. Ion damage in all three devices is minimized at low rf chuck power, moderate ECR source power and high deposition rates.

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  • Journal Name: Journal of Vacuum Science and Technology A

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  • Other: DE00001088
  • Report No.: SAND98-2297J
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 1088
  • Archival Resource Key: ark:/67531/metadc621072

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • October 14, 1998

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  • June 16, 2015, 7:43 a.m.

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  • Dec. 5, 2016, 1:29 p.m.

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Abernathy, C.R.; Hahn, Y.B.; Hays, D.C.; Johnson, D.; Lee, J.W.; MacKenzie, K. et al. Damage to III-V Devices During Electron Cyclotron Resonance Chemical Vapor Deposition, article, October 14, 1998; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc621072/: accessed December 17, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.