GaN: Defect and Device Issues

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Description

The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

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Creation Information

Pearton, S.J.; Ren, F.; Shul, R.J. & Zolper, J.C. November 9, 1998.

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This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 39 times , with 6 in the last month . More information about this article can be viewed below.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Laboratories, Albuquerque, NM, and Livermore, CA
    Place of Publication: Albuquerque, New Mexico

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Description

The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

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Medium: P

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  • Journal Name: Applied Physics Review

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  • Other: DE00001653
  • Report No.: SAND98-2502J
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 1653
  • Archival Resource Key: ark:/67531/metadc620751

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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Creation Date

  • November 9, 1998

Added to The UNT Digital Library

  • June 16, 2015, 7:43 a.m.

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  • Dec. 7, 2016, 2:57 p.m.

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Pearton, S.J.; Ren, F.; Shul, R.J. & Zolper, J.C. GaN: Defect and Device Issues, article, November 9, 1998; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc620751/: accessed January 22, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.