Stress Voiding in IC Interconnects - Rules of Evidence for Failure Analysts Metadata

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Title

  • Main Title Stress Voiding in IC Interconnects - Rules of Evidence for Failure Analysts

Creator

  • Author: FILTER, WILLIAM F.
    Creator Type: Personal

Contributor

  • Sponsor: United States. Department of Energy.
    Contributor Type: Organization
    Contributor Info: US Department of Energy (United States)

Publisher

  • Name: Sandia National Laboratories
    Place of Publication: Albuquerque, New Mexico
    Additional Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA (United States)

Date

  • Creation: 1999-09-17

Language

  • English

Description

  • Content Description: Mention the words ''stress voiding'', and everyone from technology engineer to manager to customer is likely to cringe. This IC failure mechanism elicits fear because it is insidious, capricious, and difficult to identify and arrest. There are reasons to believe that a damascene-copper future might be void-free. Nevertheless, engineers who continue to produce ICs with Al-alloy interconnects, or who assess the reliability of legacy ICs with long service life, need up-to-date insights and techniques to deal with stress voiding problems. Stress voiding need not be fearful. Not always predictable, neither is it inevitable. On the contrary, stress voids are caused by specific, avoidable processing errors. Analytical work, though often painful, can identify these errors when stress voiding occurs, and vigilance in monitoring the improved process can keep it from recurring. In this article, they show that a methodical, forensics approach to failure analysis can solve suspected cases of stress voiding. This approach uses new techniques, and patiently applies familiar ones, to develop evidence meeting strict standards of proof.
  • Physical Description: 9 p.

Subject

  • Keyword: Monitoring
  • STI Subject Categories: 36 Materials Science
  • Keyword: Reliability
  • Keyword: Aluminium Alloys
  • Keyword: Service Life
  • Keyword: Engineers

Source

  • Journal Name: Electronic Device Failure Analysis News; Other Information: Submitted to Electronic Device Failure Analysis News

Collection

  • Name: Office of Scientific & Technical Information Technical Reports
    Code: OSTI

Institution

  • Name: UNT Libraries Government Documents Department
    Code: UNTGD

Resource Type

  • Article

Format

  • Text

Identifier

  • Report No.: SAND99-2361J
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 12671
  • Archival Resource Key: ark:/67531/metadc620737

Note

  • Display Note: OSTI as DE00012671
  • Display Note: Medium: P; Size: 9 pages
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