Utilization of photoconductive gain in a-Si:H devices for radiation detection

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The photoconductive gain mechanism in a-Si:H was investigated in connection with applications to radiation detection. Various device types such as p-i-n, n-i-n and n-i-p-i-n structures were fabricated and tested. Photoconductive gain was measured in two time scales: one for short pulses of visible light (<1 {mu}sec) which simulates the transit of an energetic charged particle, and the other for rather long pulses of light (1 msec) which simulates x-ray exposure in medical imaging. We used two definitions of photoconductive gain: current gain and charge gain which is an integration of the current gain. We found typical charge gains of 3 ... continued below

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6 p.

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Lee, H.K.; Drewery, J.S.; Hong, W.S.; Jing, T.; Kaplan, S.N. & Perez-Mendez, V. May 1, 1995.

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Description

The photoconductive gain mechanism in a-Si:H was investigated in connection with applications to radiation detection. Various device types such as p-i-n, n-i-n and n-i-p-i-n structures were fabricated and tested. Photoconductive gain was measured in two time scales: one for short pulses of visible light (<1 {mu}sec) which simulates the transit of an energetic charged particle, and the other for rather long pulses of light (1 msec) which simulates x-ray exposure in medical imaging. We used two definitions of photoconductive gain: current gain and charge gain which is an integration of the current gain. We found typical charge gains of 3 {approximately} 9 for short pulses and a few hundred for long pulses at a dark current level of 10 mA/cm{sup 2}. Various gain results are discussed in terms of the device structure, applied bias and dark current.

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6 p.

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INIS; OSTI as DE95014795

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  • Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 17-21 Apr 1995

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  • Other: DE95014795
  • Report No.: LBL--37082
  • Report No.: CONF-950412--39
  • Grant Number: AC03-76SF00098
  • Office of Scientific & Technical Information Report Number: 105864
  • Archival Resource Key: ark:/67531/metadc620697

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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  • May 1, 1995

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  • June 16, 2015, 7:43 a.m.

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  • April 5, 2016, 11:08 a.m.

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Lee, H.K.; Drewery, J.S.; Hong, W.S.; Jing, T.; Kaplan, S.N. & Perez-Mendez, V. Utilization of photoconductive gain in a-Si:H devices for radiation detection, article, May 1, 1995; California. (digital.library.unt.edu/ark:/67531/metadc620697/: accessed November 17, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.