Inductively Coupled Plasma Etching of III-V Antimonides in BCl(3)/Ar and Cl(2)/Ar

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Inductively coupled plasma (ICP) etching characteristics of GaSb and AIGaAsSb have been investigated in BC13/Ar and Clz/Ar plasmas. The etch rates and selectivity between GaSb and AIGaAsSb are reported as functions of plasma chemistry, ICP power, RF self-bias, and chamber pressure. It is found that physical sputtering resorption of the etch products plays a dominant role in BC13/Ar ICP etching, while in Clz/Ar plasma, the chemical reaction dominates the etching. GaSb etch rates exceeding 2 ~rnhnin are achieved in Clz/Ar plasmas with smooth surfaces and anisotropic profiles. In BC13/Ar plasmas, etch rates of 5100 Mmin and 4200 Mmin are obtained ... continued below

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Leavitt, R.P.; Lester, L.F.; Shul, R.J.; Willison, C.G. & Zhang, L. November 4, 1998.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Laboratories, Albuquerque, NM, and Livermore, CA
    Place of Publication: Albuquerque, New Mexico

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Inductively coupled plasma (ICP) etching characteristics of GaSb and AIGaAsSb have been investigated in BC13/Ar and Clz/Ar plasmas. The etch rates and selectivity between GaSb and AIGaAsSb are reported as functions of plasma chemistry, ICP power, RF self-bias, and chamber pressure. It is found that physical sputtering resorption of the etch products plays a dominant role in BC13/Ar ICP etching, while in Clz/Ar plasma, the chemical reaction dominates the etching. GaSb etch rates exceeding 2 ~rnhnin are achieved in Clz/Ar plasmas with smooth surfaces and anisotropic profiles. In BC13/Ar plasmas, etch rates of 5100 Mmin and 4200 Mmin are obtained for GaSb and AIGaAsSb, respectively. The surfaces of both GaSb and AIGaAsSb etched in BC13/Ar plasmas remain smooth and stoichiometric over the entire range of plasma conditions investigated. This result is attributed to effective removal of etch products by physical sputtering. For a wide range of plasma conditions, the selectivity between GaSb and AIGaAsSb is close to unity, which is desirable for fabricating etched mirrors and gratings for Sb-based mid-IR laser diodes.

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  • Journal Name: Journal of Vacuum Science and Technology

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  • Other: DE00001528
  • Report No.: SAND98-2471J
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 1528
  • Archival Resource Key: ark:/67531/metadc620671

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Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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  • November 4, 1998

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  • June 16, 2015, 7:43 a.m.

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  • Nov. 29, 2016, 2:56 p.m.

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Leavitt, R.P.; Lester, L.F.; Shul, R.J.; Willison, C.G. & Zhang, L. Inductively Coupled Plasma Etching of III-V Antimonides in BCl(3)/Ar and Cl(2)/Ar, article, November 4, 1998; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc620671/: accessed October 18, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.