Fast and slow border traps in MOS devices

PDF Version Also Available for Download.

Description

Convergent lines of evidence are reviewed which show that near-interfacial oxide traps (border traps) that exchange charge with the Si can strongly affect the performance, radiation response, and long-term reliability of MOS devices. Observable effects of border traps include capacitance-voltage (C-V) hysteresis, enhanced 1/f noise, compensation of trapped holes, and increased thermally stimulated current in MOS capacitors. Effects of fast (switching times between {approximately} 10{sup {minus}6} and 1 s) and slow (switching times greater than {approximately} 1 s) border traps have been resolved via a dual-transistor technique. In conjunction with studies of MOS electrical response, electron paramagnetic resonance and spin ... continued below

Physical Description

8 p.

Creation Information

Fleetwood, D.M. September 1, 1995.

Context

This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 59 times . More information about this article can be viewed below.

Who

People and organizations associated with either the creation of this article or its content.

Publisher

  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

Provided By

UNT Libraries Government Documents Department

Serving as both a federal and a state depository library, the UNT Libraries Government Documents Department maintains millions of items in a variety of formats. The department is a member of the FDLP Content Partnerships Program and an Affiliated Archive of the National Archives.

Contact Us

What

Descriptive information to help identify this article. Follow the links below to find similar items on the Digital Library.

Description

Convergent lines of evidence are reviewed which show that near-interfacial oxide traps (border traps) that exchange charge with the Si can strongly affect the performance, radiation response, and long-term reliability of MOS devices. Observable effects of border traps include capacitance-voltage (C-V) hysteresis, enhanced 1/f noise, compensation of trapped holes, and increased thermally stimulated current in MOS capacitors. Effects of fast (switching times between {approximately} 10{sup {minus}6} and 1 s) and slow (switching times greater than {approximately} 1 s) border traps have been resolved via a dual-transistor technique. In conjunction with studies of MOS electrical response, electron paramagnetic resonance and spin dependent recombination studies suggest that different types of E{prime} defects (trivalent Si centers in SiO{sub 2} associated with O vacancies) can function as border traps in MOS devices exposed to ionizing radiation or high-field stress. Hydrogen-related centers may also be border traps.

Physical Description

8 p.

Notes

OSTI as DE95017894

Source

  • 3. European symposium on radiation and its effects on components and systems (RADECS 95), Arcachon (France), 18-22 Sep 1995

Language

Item Type

Identifier

Unique identifying numbers for this article in the Digital Library or other systems.

  • Other: DE95017894
  • Report No.: SAND--95-2056C
  • Report No.: CONF-9509107--2
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 110801
  • Archival Resource Key: ark:/67531/metadc620648

Collections

This article is part of the following collection of related materials.

Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

What responsibilities do I have when using this article?

When

Dates and time periods associated with this article.

Creation Date

  • September 1, 1995

Added to The UNT Digital Library

  • June 16, 2015, 7:43 a.m.

Description Last Updated

  • June 23, 2016, 3:49 p.m.

Usage Statistics

When was this article last used?

Yesterday: 0
Past 30 days: 0
Total Uses: 59

Interact With This Article

Here are some suggestions for what to do next.

Start Reading

PDF Version Also Available for Download.

International Image Interoperability Framework

IIF Logo

We support the IIIF Presentation API

Fleetwood, D.M. Fast and slow border traps in MOS devices, article, September 1, 1995; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc620648/: accessed August 22, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.