Development of radiation detectors based on hydrogenated amorphous silicon and its alloys Metadata

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Title

  • Main Title Development of radiation detectors based on hydrogenated amorphous silicon and its alloys

Creator

  • Author: Hong, Wan-Shick
    Creator Type: Personal

Contributor

  • Sponsor: United States. Department of Energy.
    Contributor Type: Organization
    Contributor Info: USDOE, Washington, DC (United States)

Publisher

  • Name: Lawrence Berkeley National Laboratory
    Place of Publication: California
    Additional Info: Lawrence Berkeley Lab., CA (United States)

Date

  • Creation: 1995-04-01

Language

  • English

Description

  • Content Description: Hydrogenated amorphous silicon and related materials have been applied to radiation detectors, utilizing their good radiation resistance and the feasibility of making deposits over a large area at low cost. Effects of deposition parameters on various material properties of a-Si:H have been studied to produce a material satisfying the requirements for specific detection application. Thick(-{approximately}50 {mu}m), device quality a-Si:H p-i-n diodes for direct detection of minimum ionizing particles have been prepared with low internal stress by a combination of low temperature growth, He-dilution of silane, and post annealing. The structure of the new film contained voids and tiny crystalline inclusions and was different from the one observed in conventional a-Si:H. Deposition on patterned substrates was attempted as an alternative to controlling deposition parameters to minimize substrate bending and delamination of thick a-Si:H films. Growth on an inversed-pyramid pattern reduced the substrate bending by a factor of 3{approximately}4 for the same thickness film. Thin (0.1 {approximately} 0.2 {mu}m) films of a-Si:H and a-SiC:H have been applied to microstrip gas chambers to control gain instabilities due to charges on the substrate. Light sensitivity of the a-Si:H sheet resistance was minimized and the surface resistivity was successfully` controlled in the range of 10{sup 12} {approximately} 10{sup 17} {Omega}/{four_gradient} by carbon alloying and boron doping. Performance of the detectors with boron-doped a-Si:C:H layers was comparable to that of electronic-conducting glass. Hydrogen dilution of silane has been explored to improve electrical transport properties of a-Si:H material for high speed photo-detectors and TFT applications.
  • Physical Description: 168 p.

Subject

  • Keyword: Radiation Detectors
  • Keyword: Shower Counters
  • STI Subject Categories: 36 Materials Science
  • Keyword: Silicon Alloys
  • Keyword: Thin Films
  • Keyword: Defects
  • Keyword: Amorphous State
  • Keyword: Microstructure
  • Keyword: Carrier Mobility
  • Keyword: Semiconductor Materials
  • STI Subject Categories: 44 Instrumentation, Including Nuclear And Particle Detectors
  • Keyword: Silicon

Source

  • Other Information: TH: Thesis (Ph.D.)

Collection

  • Name: Office of Scientific & Technical Information Technical Reports
    Code: OSTI

Institution

  • Name: UNT Libraries Government Documents Department
    Code: UNTGD

Resource Type

  • Thesis or Dissertation

Format

  • Text

Identifier

  • Other: DE95016434
  • Report No.: LBL--37290
  • Grant Number: AC03-76SF00098
  • Office of Scientific & Technical Information Report Number: 102299
  • Archival Resource Key: ark:/67531/metadc620347

Note

  • Display Note: INIS; OSTI as DE95016434