Development of radiation detectors based on hydrogenated amorphous silicon and its alloys Page: 72 of 182
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Earlier studies have used the following stretched single-term exponential equation to
analyze the annealing data. [49, 501
Nd(t) = Nf+ (N; + Nf) exp-(t / tR)j (Eqn. 3.3.1)
where Ni is the initial quenched-in defect density, Nf is the final annealed density, tR is the
relaxation time constant, and P is the dispersion parameter. However, the above equation
does not fit very well to the experiment data because of the presence of the minimum value
before equilibrium.[51] Therefore, the equation (3.3.1) is modified according to the
multivalley configuration model in Fig. 3.7.
7 1015
6 10' -
6 1015 _
z4 1015 2500C' -
31015 ---- -
2 1015 2000a._ A
1 105 160*
0 100 L
10-1 100 101 102 103 104 105 106 107
time (sec.)
Figure 3.8. Time dependence of defect density during annealing at different
temperatures. Circles, triangles and squares represent the measured defect
densities with annealing temperatures of 160 C, 200*C, and 250 C,
respectively. The samples were degraded by heating at 300*C for 10
minutes and quenched in water prior to annealing. The lines are the results
from curve fitting with egn.(3.3.7)58
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Hong, Wan-Shick. Development of radiation detectors based on hydrogenated amorphous silicon and its alloys, thesis or dissertation, April 1, 1995; California. (https://digital.library.unt.edu/ark:/67531/metadc620347/m1/72/: accessed April 25, 2024), University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu; crediting UNT Libraries Government Documents Department.