Electrical biasing and voltage contrast imaging in a focused ion beam system

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We present two new techniques that enhance conventional focused ion beam (FIB) system capabilities for integrated circuit (IC) analysis: in situ electrical biasing and voltage contrast imaging. We have used in situ electrical biasing to enable a number of advanced failure analysis applications including (1) real time evaluation of device electrical behavior during milling and deposition, (2) verification of IC functional modifications without removal from the FIB system, and (3) ultraprecision control for cross sectioning of deep submicron structures, such as programmed amorphous silicon antifuses. We have also developed FIB system voltage contrast imaging that can be used for a ... continued below

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9 p.

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Campbell, A.N.; Soden, J.M.; Rife, J.L. & Lee, R.G. September 1, 1995.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

We present two new techniques that enhance conventional focused ion beam (FIB) system capabilities for integrated circuit (IC) analysis: in situ electrical biasing and voltage contrast imaging. We have used in situ electrical biasing to enable a number of advanced failure analysis applications including (1) real time evaluation of device electrical behavior during milling and deposition, (2) verification of IC functional modifications without removal from the FIB system, and (3) ultraprecision control for cross sectioning of deep submicron structures, such as programmed amorphous silicon antifuses. We have also developed FIB system voltage contrast imaging that can be used for a variety of failure analysis applications. The use of passive voltage contrast imaging for defect localization and for navigation on planarized devices will be illustrated. In addition, we describe new, biased voltage contrast imaging techniques and provide examples of their application to the failure analysis of complex ICs. We discuss the necessary changes in system operating parameters to perform biased voltage contrast imaging.

Physical Description

9 p.

Notes

OSTI as DE95017566

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  • ISTFA `95: 21. international symposium for testing and failure analysis, Santa Clara, CA (United States), 5-10 Nov 1995

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  • Other: DE95017566
  • Report No.: SAND--95-1937C
  • Report No.: CONF-951156--3
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 106667
  • Archival Resource Key: ark:/67531/metadc620210

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  • September 1, 1995

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  • June 16, 2015, 7:43 a.m.

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  • April 14, 2016, 8:55 p.m.

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Campbell, A.N.; Soden, J.M.; Rife, J.L. & Lee, R.G. Electrical biasing and voltage contrast imaging in a focused ion beam system, article, September 1, 1995; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc620210/: accessed December 11, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.