In-situ deposition of sacrificial layers during ion implantation

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The retained dose of implanted ions is limited by sputtering. It is known that a sacrificial layer deposited prior to ion implantation can lead to an enhanced retained dose. However, a higher ion energy is required to obtain a similar implantation depth due to the stopping of ions in the sacrificial layer. It is desirable to have a sacrificial layer of only a few monolayers thickness which can be renewed after it has been sputtered away. We explain the concept and describe two examples: (i) metal ion implantation using simultaneously a vacuum arc ion source and filtered vacuum arc plasma ... continued below

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14 p.

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Anders, A.; Anders, S.; Brown, I. G. & Yu, K. M. February 1, 1995.

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The retained dose of implanted ions is limited by sputtering. It is known that a sacrificial layer deposited prior to ion implantation can lead to an enhanced retained dose. However, a higher ion energy is required to obtain a similar implantation depth due to the stopping of ions in the sacrificial layer. It is desirable to have a sacrificial layer of only a few monolayers thickness which can be renewed after it has been sputtered away. We explain the concept and describe two examples: (i) metal ion implantation using simultaneously a vacuum arc ion source and filtered vacuum arc plasma sources, and (ii) Metal Plasma Immersion Ion Implantation and Deposition (MePIIID). In MePIIID, the target is immersed in a metal or carbon plasma and a negative, repetitively pulsed bias voltage is applied. Ions are implanted when the bias is applied while the sacrificial layer suffers sputtering. Low-energy thin film deposition - repair of the sacrificial layer -- occurs between bias pulses. No foreign atoms are incorporated into the target since the sacrificial film is made of the same ion species as used in the implantation phase.

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14 p.

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INIS; OSTI as DE96000124

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  • 9. international conference on ion beam modification of materials, Canberra (Australia), 5-10 Feb 1995

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  • Other: DE96000124
  • Report No.: LBL--36783
  • Report No.: CONF-950220--10
  • Grant Number: AC03-76SF00098
  • Office of Scientific & Technical Information Report Number: 109438
  • Archival Resource Key: ark:/67531/metadc620107

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • February 1, 1995

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  • June 16, 2015, 7:43 a.m.

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  • Oct. 3, 2017, 6:41 p.m.

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Anders, A.; Anders, S.; Brown, I. G. & Yu, K. M. In-situ deposition of sacrificial layers during ion implantation, article, February 1, 1995; California. (digital.library.unt.edu/ark:/67531/metadc620107/: accessed October 17, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.