Thick amorphous silicon layers suitable for the realization of radiation detectors

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Thick silicon films with good electronic quality have been prepared by glow discharge of He-diluted SiH{sub 4} at a substrate temperature {approximately} 150{degree}C and subsequent annealing at 160{degree}C for about 100 hours. The stress in the films obtained this way decreased to {approximately} 100 MPa compared to the 350 MPa in conventional a-Si:H. The post-annealing helped to reduce the ionized dangling bond density from 2.5 {times} 10{sup 15} cm{sup {minus}3} to 7 {times} 10{sup 14} cm{sup {minus}3} without changing the internal stress. IR spectroscopy and hydrogen effusion measurements implied the existence of microvoids and tiny crystallites in the material showing ... continued below

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8 p.

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Hong, Wan-Shick; Drewery, J.S.; Jing, Tao; Lee, Hyong-Koo; Perez-Mendez, V. & Petrova-Koch, V. April 1, 1995.

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Thick silicon films with good electronic quality have been prepared by glow discharge of He-diluted SiH{sub 4} at a substrate temperature {approximately} 150{degree}C and subsequent annealing at 160{degree}C for about 100 hours. The stress in the films obtained this way decreased to {approximately} 100 MPa compared to the 350 MPa in conventional a-Si:H. The post-annealing helped to reduce the ionized dangling bond density from 2.5 {times} 10{sup 15} cm{sup {minus}3} to 7 {times} 10{sup 14} cm{sup {minus}3} without changing the internal stress. IR spectroscopy and hydrogen effusion measurements implied the existence of microvoids and tiny crystallites in the material showing satisfactory electronic properties. P-I-N diodes for radiation detection applications have been realized out of the new material.

Physical Description

8 p.

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INIS; OSTI as DE95014874

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  • Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 17-21 Apr 1995

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  • Other: DE95014874
  • Report No.: LBL--37083
  • Report No.: CONF-950412--30
  • Grant Number: AC03-76SF00098
  • Office of Scientific & Technical Information Report Number: 101097
  • Archival Resource Key: ark:/67531/metadc620068

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  • April 1, 1995

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  • June 16, 2015, 7:43 a.m.

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  • April 5, 2016, 12:09 p.m.

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Hong, Wan-Shick; Drewery, J.S.; Jing, Tao; Lee, Hyong-Koo; Perez-Mendez, V. & Petrova-Koch, V. Thick amorphous silicon layers suitable for the realization of radiation detectors, article, April 1, 1995; California. (digital.library.unt.edu/ark:/67531/metadc620068/: accessed September 24, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.